Datasheet > 2N3055_12

2N3055_12

更新时间： 2022-04-19 21:07:28

品牌	Logo	应用领域
COMSET		/
页数	文件大小	规格书
3页	76K
描述
NPN SILICON DARLINGTONS

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数据手册

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2N3055_12 数据手册

2N3055

NPN SILICON DARLINGTONS

The 2N3055 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case.

Designed for general purpose, moderate speed, switching and amplifier applications

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CBO

V_CEO

Collector to Base Voltage

100

#Collector-Emitter Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VCER

V_EBO

V_CB

V_EB

I_C

Collector-Base Voltage

Emitter-Base Voltage

100

Collector Current – Continuous

Base Current – Continuous

I_B

@ T_C= 25°

Derate above 25°

115

0.657

W/°C

P_D

Total Device Dissipation

T_J

T_S

Junction Temperature

Storage Temperature

200

°C

-65 to +200

THERMAL CHARACTERISTICS

Symbol

R_thJC

Ratings

Value

Unit

Thermal Resistance, Junction to Case

1.52

°C/W

31/10/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

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