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2N2907AUS-1 PDF预览

2N2907AUS-1

更新时间: 2024-01-27 18:17:17
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关晶体管
页数 文件大小 规格书
2页 44K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon,

2N2907AUS-1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:UNCASED CHIP, X-XUUC-N
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.62最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:X-XUUC-N
JESD-609代码:e0元件数量:1
最高工作温度:200 °C封装主体材料:UNSPECIFIED
封装形状:UNSPECIFIED封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):300 ns最大开启时间(吨):45 ns
Base Number Matches:1

2N2907AUS-1 数据手册

 浏览型号2N2907AUS-1的Datasheet PDF文件第1页 
Electrical Characteristics @ Tj = 25 °C  
Symbol  
Parameter  
Conditions  
Min Max Unit  
OFF CHARACTERISTICS  
V(BR)CBO Breakdown Voltage, Collector to Base  
V(BR)EBO Breakdown Voltage, Emitter to Base  
V(BR)CEO Breakdown Voltage, Collector to Emitter  
Bias Cond. D, IC=10uAdc  
Bias Cond. D, IE=10uAdc  
Bias Cond. D, IC= 10mAdc, pulsed  
Bias Cond. D, VCE=50Vdc  
Bias Cond. D, VCB=50Vdc  
Bias Cond. D, VEB= 4Vdc  
60  
5
60  
Vdc  
Vdc  
Vdc  
ICES  
Collector to Emitter Cutoff Current  
Collector to Base Cutoff Current  
Emitter to Base Cutoff Current  
50 nAdc  
10 nAdc  
50 nAdc  
ICBO1  
IEBO  
ON CHARACTERISTICS  
hFE1  
hFE2  
hFE3  
hFE4  
hFE5  
Forward-Current Transfer Ratio  
VCE=10Vdc, IC=0.1mAdc  
VCE=10Vdc, IC=1.0mAdc  
VCE=10Vdc, IC=10mAdc  
VCE=10Vdc, IC=150mAdc, pulsed  
VCE=10Vdc, IC=500mAdc, pulsed  
IC=150mAdc, IB=15mAdc, pulsed  
IC=500mAdc, IB=50mAdc, pulsed  
IC=150mAdc, IB=15mAdc, pulsed  
IC=500mAdc, IB=50mAdc, pulsed  
75  
100 450  
100  
100 300  
50  
Forward-Current Transfer Ratio  
Forward-Current Transfer Ratio  
Forward-Current Transfer Ratio  
Forward-Current Transfer Ratio  
VCE(sat)1 Collector to Emitter Saturation Voltage  
VCE(sat)2 Collector to Emitter Saturation Voltage  
VBE(sat)1  
VBE(sat)2  
0.4 Vdc  
1.6 Vdc  
0.6 1.3 Vdc  
2.6 Vdc  
Base to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
hfe  
/hfe/  
Short Circuit Forward Current Xfer Ratio  
VCE= 10Vdc,IC =1mAdc, f= 1kHz  
VCE= 20Vdc,IC =50mAdc, f=100MHz  
100  
2
Magnitude of Short Circuit Forward  
Current Transfer Ratio  
Output Capacitance  
Cobo  
Cibo  
VCB= 10Vdc, IE =0, 100kHz< f <1MHz  
VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz  
8 pF  
30 pF  
Input Capacitance  
SWITCHING CHARACTERISTICS  
ton  
toff  
Saturated Turn-on Time  
Saturated Turn-off Time  
As defined in 19500/291 Figure 7  
As defined in 19500/291 Figure 8  
45 nS  
300 nS  
2

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