2N2646 – 2N2647
SILICON UNIJUNCTION TRANSISTORS
Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point
current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these
devices are much faster switches.
The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary
importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications
where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where
a low emitter leakage current and a low peak point emitter current (trigger current) are required and also
for triggering high power SCR’s.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Tj=125°C unless otherwise noted
Symbol
Ratings
2N2646 – 2N2647
Unit
VB2E
30
50
2
Emitter-Base2 Voltage
RMS Emitter Current
V
mA
A
Ie
ie
VB2B1
PD
Peak Pulse Emitter Current *
Interbase Voltage
RMS power Dissipation
Junction Temperature
Storage Temperature
35
300
V
mW
°C
°C
TJ
-65 to +125
-65 to +150
TStg
Capacitor discharge – 10µF or less, 30volts or less.
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Min.
Typ. Max. Unit
2N2646
2N2647
0.56
0.68
4.7
-
-
-
0.75
0.82
9.1
η
Intrinsic stand-off ratio
B2B1 = 10V
-
V
RBBO
Interbase Resistance , VB2B1 = 3V
KΩ
V
VEB1(sat)
Emitter Saturation Voltage
VB2B1 = 10V , IE = 50 mA
Modulated Interbase Current
VB2B1 = 10V , IE = 50 mA
Emitter Revers Current
-
-
-
15
-
2.5
-
IB2(MOD)
IEO
V(BR)B1E
IV
V
µA
V
-
12
-
VB2E = 30 V , IB1 = 0
Base 1 Emitter breakdown Voltage
IE =100 µA
30
-
2N2646
2N2647
2N2646
2N2647
4
8
-
-
-
-
-
-
-
5
2
Valley Current , VB2B1 = 20 V
Peak Current , VB2B1 = 25 V
mA
µA
IP
-
24/09/2012
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COMSET SEMICONDUCTORS