2N2647

更新时间： 2024-02-17 03:21:11

品牌	Logo	应用领域
COMSET		晶体晶体管单结晶体管
页数	文件大小	规格书
3页	100K
描述
SILICON UNIJUNCTION TRANSISTORS

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技术参数
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2N2647 技术参数

生命周期：	End Of Life	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.65
Base Number Matches：	1

2N2647 数据手册

2N2646

2N2647

SILICON UNIJUNCTION TRANSISTORS

Silicon Planar Unijunction Transistors have a structure resulting in lower saturation

voltage, peak-point current and valley current as zell as a much higher base-one peak

pulse voltage. In addition, these devices are much faster switches.

The 2N2646 is intended for general purpose industrial applications where circuit

economy is of primary importance, and is ideal for use in firing circuits for Silicon

Controlled Rectifiers and other applications where a guaranteed minimum pulse

amplitude is required. The 2N2647 is intended for applications where a low emitter

leakage current and a low peak point emitter current (trigger current) are required and

also for triggering high power SCR’s.

ABSOLUTE MAXIMUM RATINGS

T_j=125°C unless otherwise noted

2N2646

Symbol

Ratings

Unit

2N2647

Emitter-Base2 Voltage

RMS Emitter Current

Peak Pulse Emitter Current *

Interbase Voltage

RMS power Dissipation

Junction Temperature

Storage Temperature

V_B2E

I_e

i_e

V_B2B1

P_D

T_J

300

°C

-65 to +125

-65 to +150

T_Stg

Capacitor discharge – 10µF or less, 30volts or less.

12 3

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