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2N2484_1 PDF预览

2N2484_1

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 215K
描述
NPN SILICON LOW POWER TRANSISTOR

2N2484_1 数据手册

 浏览型号2N2484_1的Datasheet PDF文件第2页 
2N2484  
Silicon NPN Transistor  
Data Sheet  
Description  
Applications  
General purpose  
Low power  
Semicoa Semiconductors offers:  
NPN silicon transistor  
Screening and processing per MIL-PRF-19500 Appendix E  
JAN level (2N2484J)  
JANTX level (2N2484JX)  
JANTXV level (2N2484JV)  
JANS level (2N2484JS)  
QCI to the applicable level  
100% die visual inspection per MIL-STD-750 method  
2072 for JANTXV and JANS  
Radiation testing (total dose) upon request  
Features  
Hermetically sealed TO-18 metal can  
Also available in chip configuration  
Chip geometry 0307  
Reference document:  
MIL-PRF-19500/376  
Benefits  
Qualification Levels: JAN, JANTX,  
JANTXV and JANS  
Please contact Semicoa for special configurations  
www.SEMICOA.com or (714) 979-1900  
Radiation testing available  
Absolute Maximum Ratings  
TC = 25°C unless otherwise specified  
Parameter  
Collector-Emitter Voltage  
Collector-Base Voltage  
Symbol  
VCEO  
VCBO  
Rating  
60  
Unit  
Volts  
Volts  
60  
Volts  
mA  
Emitter-Base Voltage  
VEBO  
IC  
6
Collector Current, Continuous  
50  
mW  
mW/°C  
°C/W  
Power Dissipation, TA = 25°C  
360  
PT  
2.06  
Derate linearly above 25°C  
Thermal Resistance  
325  
RθJA  
TJ  
°C  
°C  
Operating Junction Temperature  
Storage Temperature  
-65 to +200  
-65 to +200  
TSTG  
Semicoa Semiconductors, Inc.  
Copyright2002  
Rev. F  
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541  
Page 1 of 2  
www.SEMICOA.com  

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