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2KMD100S-W PDF预览

2KMD100S-W

更新时间: 2024-11-20 18:50:11
品牌 Logo 应用领域
RECTRON 光电二极管
页数 文件大小 规格书
4页 573K
描述
Bridge Rectifier Diode,

2KMD100S-W 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.78
其他特性:HIGH RELIABILITY最小击穿电压:100 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PDSO-G4
JESD-609代码:e3最大非重复峰值正向电流:60 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:100 V
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2KMD100S-W 数据手册

 浏览型号2KMD100S-W的Datasheet PDF文件第2页浏览型号2KMD100S-W的Datasheet PDF文件第3页浏览型号2KMD100S-W的Datasheet PDF文件第4页 
2KMD80S  
THRU  
2KMD200S  
SCHOTTKY BARRIER BRIDGE RECTIFIER  
VOLTAGE RANGE 80 TO 200 Volts CURRENT 2.0 Ampere  
FEATURES  
* Low switching noise  
* Low forward voltage drop  
* High current capability  
* High switching capability  
* High surge capabitity  
* High reliability  
MD-S  
MECHANICAL DATA  
1
2
3
4
* Case: Molded plastic  
M D  
* Epoxy: Device has UL flammability classification 94V-O  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
.035(0.9)  
.020(0.5)  
* Weight: 0.134 gram  
.004(0.10) MAX.  
.108(2.74)  
.092(2.34)  
.106(2.7)  
.091(2.3)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
.014(0.35)  
.006(0.15)  
.193(4.9)  
.177(4.5)  
Dimensions in inches and (millimeters)  
O
MAXIMUM RATINGS (@ T  
A
=25 C unless otherwise noted)  
SYMBOL  
2KMD150S  
150  
UNITS  
Volts  
Volts  
Volts  
RATINGS  
2KMD200S  
200  
2KMD80S  
80  
2KMD100S  
100  
VRRM  
VRMS  
VDC  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
56  
80  
70  
105  
140  
200  
100  
150  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
at Derating Lead Temperature  
IO  
2.0  
Amps  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
60  
50  
R
R
ΘJ A  
0C/W  
Typical Thermal Resistance (Note 1)  
15  
ΘJ L  
Typical Junction Capacitance (Note 3)  
Operating Temperature Range  
CJ  
TJ  
110  
150  
pF  
0 C  
Storage Temperature Range  
TSTG  
-55 to + 150  
0 C  
O
ELECTRICAL CHARACTERISTICS(@T  
A
=25 C unless otherwise noted)  
2KMD80S THRU 2KMD200S  
0.85  
CHARACTERISTICS  
SYMBOL  
VF  
UNITS  
Volts  
uA  
Maximum Instantaneous Forward Voltage at 2.0 A DC  
@TA = 25oC  
Maximum Average Reverse Current  
200  
2
IR  
at Rated DC Blocking Voltage  
@TA = 100oC  
mA  
NOTES : 1. Thermal Resistance : At 9.5mm lead lengths, PCB mounted.  
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.  
3. "Fully ROHS compliant", "100% Sn plating (Pb-free)".  
2012-02  
REV:O  

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