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2KBP01M_NL PDF预览

2KBP01M_NL

更新时间: 2024-01-16 00:12:57
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
3页 60K
描述
Bridge Rectifier Diode, 1 Phase, 2A, 100V V(RRM), Silicon, LEAD FREE, PLASTIC, KBPM, 4 PIN

2KBP01M_NL 技术参数

生命周期:Obsolete包装说明:R-PSIP-W4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.08其他特性:UL RECOGNIZED
最小击穿电压:100 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSIP-W4
JESD-609代码:e3最大非重复峰值正向电流:60 A
元件数量:4相数:1
端子数量:4最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE最大功率耗散:4.7 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:NO端子面层:TIN
端子形式:WIRE端子位置:SINGLE
Base Number Matches:1

2KBP01M_NL 数据手册

 浏览型号2KBP01M_NL的Datasheet PDF文件第2页浏览型号2KBP01M_NL的Datasheet PDF文件第3页 
March 2006  
2KBP005M/3N253 - 2KBP10M/3N259  
Bridge Rectifiers  
Features  
Surge overload rating: 60 amperes peak.  
Reliable low cost construction utilizing molded plastic technique.  
UL certified, UL #E111753.  
_
_
_
+
KBPM  
Absolute Maximum Ratings *  
T
= 25°C unless otherwise noted  
a
Value  
Symbol  
Parameter  
005M 01M 02M 04M 06M 08M 10M Units  
253 254 255 256 257 258 259  
VRRM  
VRMS  
VR  
Maximum Repetitive Reverse Voltage  
Maximum RMS Bridge Input Voltage  
DC Reverse Voltage (Rated VR)  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
100  
1000  
IF(AV)  
Average Recitified Forward Current,  
@ TA = 50°C  
2.0  
60  
A
A
IFSM  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half-Sine-Wave  
TSTG  
TJ  
Storage Temperature Range  
Junction Temperature  
-55 to +150  
-55 to +150  
°C  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
4.7  
Units  
PD  
RθJA  
Power Dissipation  
Thermal Resistance, Junction to Ambient, * per leg  
W
18  
°C/W  
* Device mounted on PCB with 0.47 × 0.47” (12 × 12mm).  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
VF  
Forward Voltage, per element @ 3.14A  
Reverse Current, per element @ Rated VR  
1.1  
V
IR  
TA = 25°C  
TA = 125°C  
50  
500  
µA  
µA  
I2t Rating for Fusing  
t < 8.35ms  
15  
25  
A2s  
CT  
Total Capacitance, per leg  
VR = 4.0 V, f = 1.0 MHz  
pF  
©2006 Fairchild Semiconductor Corporation  
1
www.fairchildsemi.com  
2KBP005M/3N253 - 2KBP10M/3N259 Rev. E  

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