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2KBP005 PDF预览

2KBP005

更新时间: 2024-11-18 07:28:07
品牌 Logo 应用领域
EIC 整流二极管桥式整流二极管
页数 文件大小 规格书
2页 47K
描述
SILICON BRIDGE RECTIFIERS

2KBP005 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSIP-W4
Reach Compliance Code:compliant风险等级:5.63
Is Samacsys:N其他特性:HIGH RELIABILITY
最小击穿电压:50 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSIP-W4
最大非重复峰值正向电流:60 A元件数量:4
相数:1端子数量:4
最高工作温度:165 °C最低工作温度:-50 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
最大重复峰值反向电压:50 V表面贴装:NO
端子形式:WIRE端子位置:SINGLE
Base Number Matches:1

2KBP005 数据手册

 浏览型号2KBP005的Datasheet PDF文件第2页 
SILICON BRIDGE RECTIFIERS  
2KBP005 - 2KBP10  
PRV : 50 - 1000 Volts  
Io : 2.0 Amperes  
KBP  
0.71 (18.0)  
0.63 (16.0)  
FEATURES :  
* High case dielectric strength  
* High surge current capability  
* High reliability  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
* Pb / RoHS Free  
0.825 (20.95)  
0.605 (15.36)  
AC AC  
+
0.035 (0.89)  
0.028 (0.71)  
0.500 (12.7)  
MIN.  
0.16 (4.00)  
0.14 (3.55)  
0.276 (7.01 )  
0.236 (5.99)  
0.105 (2.66)  
0.085 (2.16)  
MECHANICAL DATA :  
* Case : Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated lead solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
Dimensions in inches and ( millimeter )  
* Weight : 3.4 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
2KBP 2KBP 2KBP 2KBP 2KBP 2KBP 2KBP  
RATING  
SYMBOL  
UNIT  
005  
01  
02  
04  
06  
08  
10  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
100  
200  
400  
600  
800  
1000  
V
V
V
A
VRRM  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
2.0  
420  
600  
560  
800  
700  
Maximum DC Blocking Voltage  
100  
1000  
IF(AV)  
Maximum Average Forward Output Current Ta = 55°C  
Peak Forward Surge Current, Single sine wave  
Superimposed on rated load (JEDEC Method)  
Rating for fusing ( t < 8.3 ms. )  
IFSM  
60  
15  
A
A2S  
V
I2t  
Maximum Instantaneous Forward Voltage drop  
per element at 3.14 Amp.  
VF  
1.1  
10  
500  
IR  
IR(H)  
CJ  
Maximum DC Reverse Current  
Ta = 25 °C  
mA  
mA  
pF  
at Rated DC Blocking Voltage per element Ta = 125 °C  
Typical Junction Capacitance per element (Note 1)  
Typical Thermal Resistance (Note 2)  
25  
30  
RqJA  
TJ  
°C/W  
°C  
Operating Junction Temperature Range  
Storage Temperature Range  
- 50 to + 165  
- 50 to + 165  
TSTG  
°C  
Notes :  
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.  
2 ) Thermal resistance from Junction to Ambient with units mounted on a 0.47" X 0.47" ( 12mm X 12mm ) Cu. Pads.  
Page 1 of 2  
Rev. 02 : March 24, 2005  

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