5秒后页面跳转
2EDL8014GXUMA1 PDF预览

2EDL8014GXUMA1

更新时间: 2024-02-07 23:42:48
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
18页 649K
描述
暂无描述

2EDL8014GXUMA1 数据手册

 浏览型号2EDL8014GXUMA1的Datasheet PDF文件第7页浏览型号2EDL8014GXUMA1的Datasheet PDF文件第8页浏览型号2EDL8014GXUMA1的Datasheet PDF文件第9页浏览型号2EDL8014GXUMA1的Datasheet PDF文件第11页浏览型号2EDL8014GXUMA1的Datasheet PDF文件第12页浏览型号2EDL8014GXUMA1的Datasheet PDF文件第13页 
EiceDRIVER™  
2EDL8012/3/4 & 2EDL8112/3/4  
Characteristics  
4.4  
Dynamic Electrical Characteristics  
VDD = VHB = 12 V, VHS =VSS=0V. TC = 25oC unless otherwise specified.  
Symbol  
Description  
High Side Peak Pull Up Current1  
Min  
---  
Typ  
2
Max Units Conditions  
---  
---  
---  
VHO = 0 V , 2EDL8x12  
IPUH  
---  
3
A
VHO = 0 V , 2EDL8x13  
VHO = 0 V , 2EDL8x14  
---  
4
High Side Peak Pull Down  
Current1  
Low Side Peak Pull Up Current1  
IPDH  
---  
5
---  
A
A
VHO = 12 V  
ratIPUL  
---  
---  
---  
---  
---  
---  
---  
---  
---  
2
3
---  
---  
---  
---  
50  
54  
5
VLO = 0 V , 2EDL8x12  
VLO = 0 V , 2EDL8x13  
VLO = 0 V , 2EDL8x14  
VLO = 12 V  
4
IPDL  
TDR  
TDF  
Low Side Peak Pull Down Current1  
Rising Propagation Delay2,3  
Falling Propagation Delay3  
Delay Matching4  
Minimum Input Pulse Width5  
Bootstrap Diode Turn off Time1,6  
6
A
45  
45  
2
ns  
ns  
ns  
ns  
ns  
CLOAD = 0  
CLOAD = 0  
TDM  
TPW  
TDRR  
---  
10  
40  
---  
IF = 20 mA, IPRR = 0.5 A  
4.5  
Thermal Mechanical Characteristics  
Symbol  
Description  
Min  
---  
Typ  
3
Max Units Conditions  
RthJC  
Junction to Case Thermal  
Resistance  
---  
---  
---  
°C/W  
°C/W  
°C/W  
Bottom  
---  
46  
42  
Top  
RthJA  
Device on PCB  
---  
6 cm2 cooling area7  
1 Not subject to production test  
2 Rising propagation delay from LI to LO and from HI to HO  
3 A transient detector blocks the toggling of the high side output when it detects moving phase node (due to transition and/or  
oscillation). It prevents unwanted retoggling but may increase propogation delay. See transient detector activation in Figure 6.  
4 Consolidated delay matching (1) ON: between LO Rising and HO Falling and (2) OFF: betweenLO Falling and HO Rising  
5 Minimum input pulse width that produces valid output signal  
6 External schottky boot diode in parallel recommended for high dv/dt application  
7 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB vertical in  
still air.  
Datasheet  
10  
Rev. 2.0  
2019-05-29  
 
 

与2EDL8014GXUMA1相关器件

型号 品牌 获取价格 描述 数据表
2EDL8023G3C INFINEON

获取价格

2EDL8023G3C is a high-side and low-side driver designed for advanced switching converters
2EDL8024G INFINEON

获取价格

EiceDRIVER™ 2EDL8024G 双通道结隔离式栅极驱动器 IC 专为半桥应用中
2EDL8024G3C INFINEON

获取价格

2EDL8024G3C is a high-side and low-side driver designed for advanced switching converters
2EDL8033G3C INFINEON

获取价格

The 2EDL8033G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge
2EDL8033G4B INFINEON

获取价格

The 2EDL8033G4B is designed to drive both high-side and low-side MOSFETs in a half-bridge
2EDL8033G4C INFINEON

获取价格

The 2EDL8033G4C is designed to drive both high-side and low-side MOSFETs in a half-bridge
2EDL8034G3C INFINEON

获取价格

The 2EDL8034G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge
2EDL8034G4B INFINEON

获取价格

The 2EDL8034G4B is designed to drive both high-side and low-side MOSFETs in a half-bridge
2EDL8034G4C INFINEON

获取价格

The 2EDL8034G4C is designed to drive both high-side and low-side MOSFETs in a half-bridge
2EDL8123G3C INFINEON

获取价格

2EDL8123G3C is a high-side and low-side drive