Datasheet > 2ED300C17-S

2ED300C17-S

更新时间： 2024-02-19 13:50:50

品牌	Logo	应用领域
EUPEC		驱动器双极性晶体管
页数	文件大小	规格书
32页	476K
描述
Dual IGBT Driver for Medium and High Power IGBTs

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中文翻译

获取价格

技术参数
数据手册

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2ED300C17-S 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	Factory Lead Time：	1 week
风险等级：	5.68	Is Samacsys：	N
Base Number Matches：	1

2ED300C17-S 数据手册

Technical Information

EiceDRIVER^™2ED300C17-S

preliminary

1.7 Maximum permissible values

Supply voltage V_DC

Maximum primary supply voltage

Max. voltage on inputs IN A; IN B

+16

±20

PWM signal input voltage V_in

Logic signal input voltage V_iH

Logic signal output current I_OC

Max. voltage (Mode; Reset)

±20

Fault output; max. continuous current open

collector

Peak output current ON I_{G on}

Peak output current OFF I_{G off}

Output current summed

Max. driver peak output current

+30

-30

Average value of the summed output

current values per channel ¹⁾

133

maximum |I_out

Maximum output power P_DC/DC

Maximum IGBT voltage V_CES

P_DC/DCchannelA + channel B

Maximum collector-emitter voltage on IGBT

1700

Isolation test voltage V_{isol IO}

Isolation test voltage V_{isol 12}

Surge voltage test V_{isol Su}

Input- Output (RMS, 50Hz, 1s)

5000

2250

9600

Input A- Output B (RMS, 50Hz,1s)

Surge test according to EN50178

Input to Output

Gate resistor R_{g min}

Min. gate resistor (module internal +

external gate resistor)

Gate capacity C_{ies max}

Maximum IGBT gate capacity

350

50*

dv/dt

Voltage slew rate

kV/

µs

secondary to primary site

T_op

Operating temperature 2ED300C17-S

Operating temperature 2ED300C17-ST

Storage temperature

-25......+85

-40 .....+85

°C

T_op

T_sto.

°C

-40 .....+85

60’000

533

f_{s max}switching frequency

Supply current I_{DC max.}

Max. switching frequency(T_op<65°C P_DC/DC=8W)

Maximum continue permissible current draw

of the dual driver

m A

t_{TD min}min. interlock delay time

Factory set delay time in half-bridge mode

Maximum duty cycle

1,6

µs

duty cycle

100

during test

•

133mA refer to gate input and additive ancillary voltage (see chapter 2.10)

|I_{out AV}= |I_G|_AV+I_out

Page 8

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与2ED300C17-S相关器件

型号	品牌	获取价格	描述	数据表
2ED300C17SROHSBPSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
2ED300C17-ST	INFINEON	获取价格	Dual IGBT Driver Board For Infineon Medium and High Power IGBT Modules
2ED300C17-ST	EUPEC	获取价格	Dual IGBT Driver for Medium and High Power IGBTs
2ED300C17STROHSBPSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
2ED4820-EM	INFINEON	获取价格	48 V smart high-side MOSFET gate driver with SPI for automotive applications
2EDB7259E	INFINEON	获取价格	The EiceDRIVER? 2EDB7259E is a dual channel isolated gate driver IC with floating outputs.
2EDB7259K	INFINEON	获取价格	The EiceDRIVER? 2EDB7259K is a dual channel isolated gate driver IC with floating outputs.
2EDB7259Y	INFINEON	获取价格	The EiceDRIVER™ 2EDB7259Y is a dual-channel i
2EDB8259E	INFINEON	获取价格	The EiceDRIVER? 2EDB8259E is a dual channel isolated gate driver IC with floating outputs.
2EDB8259F	INFINEON	获取价格	EiceDRIVER? 2EDB8259F是一款具有浮动输出的双通道隔离栅极驱动器IC。这

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