Datasheet > 2ED2103S06F

2ED2103S06F

更新时间： 2023-09-03 20:32:05

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
25页	1151K
描述
650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs.

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2ED2103S06F 数据手册

2ED2181 (4) S06F

2ED2103S06F

650 V half bridge gate driver with integrated bootstrap diode

Features

Product summary



Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

V_{S_OFFSET}= 650 V max

I_o+pk/ I_o-pk(typ.) = 290 mA / 700 mA

V_CC= 10 V to 20 V

Delay matching = 10 ns max.

Propagation delay = 90 ns

Negative VS transient voltage immunity of -100 V

Floating channel designed for bootstrap operation

Operating voltages (VS node) up to + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

Logic operational up to –11 V on VS Pin

Negative voltage tolerance on inputs of –5 V

Independent under voltage lockout for both channels

Schmitt trigger inputs with hysteresis

3.3 V, 5 V and 15 V input logic compatible

Maximum supply voltage of 25 V

Package

DSO-8 package

RoHS compliant

DSO-8

Potential applications

Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications.

Typical Infineon recommendations are as below:



Motor drives, general purpose inverters having TRENCHSTOP ™ IGBT6 or 600 V EasyPACK™ modules

Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or

TRENCHSTOP™ family IGBTs or their equivalent power stages



Battery operated small home appliances such as power tools, vacuum cleaners using low voltage OptiMOS™

MOSFETs or their equivalent power stages

Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having

high voltage CoolMOS™ super junction MOSFETs or TRENCHSTOP™ H3 and WR5 IGBT series

High power LED and HID lighting having CoolMOS™ super junction MOSFETs

Electric vehicle (EV) charging stations and battery management systems



Driving 650 V SiC MOSFETs in above applications

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Ordering information

Standard pack

Base part number Package type

2ED2103S06F DSO – 8

Orderable part number

2ED2103S06FXUMA1

Form

Quantity

Tape and Reel

2500

Datasheet

www.infineon.com/soi

Please read the Important Notice and Warnings at the end of this document

Page 1 of 25

V 2.3

2020-12-07

12 3 4 5 6 7...25

下载PDF

与2ED2103S06F相关器件

型号	品牌	描述	获取价格	数据表
2ED2104S06F	INFINEON	650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink current	获取价格
2ED21064S06J	INFINEON	650 V half bridge gate driver with integrated bootstrap diode	获取价格
2ED2106S06F	INFINEON	650 V high-side and low-side gate driver with integrated bootstrap diode	获取价格
2ED21084S06J	INFINEON	650 V high-side and low-side gate driver with integrated bootstrap diode	获取价格
2ED21084S06JXUMA1	INFINEON	Half Bridge Based Peripheral Driver,	获取价格
2ED2108S06F	INFINEON	650 V half bridge gate driver with integrated bootstrap diode	获取价格