Datasheet > 2CLG3508T

2CLG3508T

更新时间： 2022-02-26 14:06:49

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描述
High Voltage Diodes

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2CLG3508T 数据手册

2CLG3508 2CLG3508(T)

High Voltage Diodes for Micro-wave Oven

Power Semiconductor Technology

Features

Outline Dimensions and Mark

I_F

350mA

8kV

Unit mm

V_RRM

High reliability

Code Lot No.

7.5 0.5

1.2 0.05

Cathode Mark

Applications

Rectification for high voltage power supply

of magnetron in Micro wave oven and others

22min

Type

22 0.5

Code

Cathode Mark

2CLG3508

TG3508

2CLG3508(T)

Limiting Values Absolute Maximum Rating

2CLG3508

2CLG3508(T)

Item

Symbol Unit

V_RRM

I_F(AV)

7.5

Repetitive Peak Reverse Voltage

Average Forward Current

350

(50H_ZHalf-sine wave, Resistance load, T_a60

50H_ZHalf-sine wave, One-shot, T_a=25

)

I_FSM

I_RSM

T_(vj)

Forward Surge Current

Reverse Surge Current

virtual Junction Temperature

Storage Temperature

(W_P=1ms, Rectangular-wave, One-shot, T_a=25

120

T_stg

-40 ~ +130

Cooling Requirement: Cathode terminal is fastened to radiating fin that size is more than 50mm 50mm 0.6mm Wind-cooled velocity is

more than 0.5m/s

Electrical Characteristics T_a=25 Unless otherwise specified

2CLG3508

2CLG3508(T)

Item

Symbol

V_FM

Unit

Test Condition

I_FM=350mA

V_RM=V_RRM

13.5

14.0

Peak Forward Voltage

Peak Reverse Current

Rererse Recovery Time

0.15

I_RRM1

trr

I_F=100mA I_R=100mA

90% Recover

I_R=100

7.6

8.5

Avalanche Breakdown Voltage

SiPower - The official marketing arm of Zhonghuan Semiconductor

http://www.sipower-inc.com

中文翻译

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