Datasheet > 2CLG50KV0.1A

2CLG50KV0.1A

更新时间： 2022-02-26 13:50:57

品牌	Logo	应用领域
HVGT		/
页数	文件大小	规格书
1页	466K
描述
0.1A 50kV 80nS--High voltage silicon rectifier stack

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2CLG50KV0.1A 数据手册

2CLG50KV/0.1A

0.1A 50kV 80nS--High voltage silicon rectifier stack

HVGT High voltage silicon rectifier is made

SHAPE DISPLAY:

of high quality glass passivated chip and high

reliability epoxy resin sealing structure, and

through

professional

testing

equipment

inspection qualified after to customers.

FEATURES:

1. High reliability design.

2. High voltage design.

3. High frequency design..

4. Conform to RoHS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

SIZE: (Unit:mm)

HVGT NAME: HVS-080960H

APPLICATIONS:

1. High frequency switching power supply.

2. Power supply of laser equipment .

3. General purpose high voltage rectifier.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: external lead.

3. Net weight: 7.0 grams (approx).

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value Units

Repetitive Peak Renerse Voltage

Average Output Current

Suege Current

VRRM

Ta=25°C;

100

Ta=25°C;Resistive Load

Ta=25°C;8.3 mS

IFSM

3.0

Junction Temperature

-40~+125

125

°C

Allowable Operation Case Temperature

Storage Temperature

TSTG

-40~+125

ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)

Items

Symbols

Condition

Data value Units

Maximum Forward Voltage Drop

IR1

IR2

TRR

at 25°C;IF =IF(AV)

at 25°C;VR =VRRM

5.0

Maximum Reverse Current

at 100°C;VR =VRRM

Maximum Reverse Recovery Time

Junction Capacitance

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

at 25°C; VR=0V; f=1MHz

GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638

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