Datasheet > 2A3A

2A3A

更新时间： 2022-01-19 01:32:00

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3页	111K
描述
TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| SOT-172D

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2A3A 数据手册

2A3/2A3A

0.3 Watts, 20 Volts, Class A

Linear to 2000 MHz

GENERAL DESCRIPTION

CASE OUTLINE

2A3 - 55ET, STYLE 2

The 2A3 is a COMMON EMITTER transistor capable of providing up to

0.3 Watt of Class A, RF output power to 2000 MHz. This transistor is

specifically designed for general Class A amplifier applications. It utilizes

gold metalization and diffused ballasting to provide high reliability and

supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

2A3A - 55EU, STYLE 2

Maximum Power Dissipation @ 25^oC

3.5 Watts

Maximum Voltage and Current

BVces

BVebo

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

50 Volts

3.5 Volts

300 mAmps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 150^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP MAX UNITS

Pout

VSWR

Power Out (<1.0 db gain comp) F = 2000 MHz

0.3

0.4

Watts

Power Input

Ic = 140 mA

0.05

30:1

Power Gain

Vcc = 20 Volts

7.7

3.4

8.5

3.7

Transition Frequency

Load Mismatch Tolerance

Vce = 20 V, Ic = 140 mA

GHz

BVebo

BVces

BVceo

h_FE

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC Current Gain

Capacitance

Thermal Resistance

Ie = 1 mA

Ic = 25 mA

Vce = 5 V, Ic = 100 mA

Vcb = 28V, f = 1 MHz

3.5

Volts

Cob

2.0

3.0

^oC/W

θjc

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

12 3

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