Datasheet > 2SD965

2SD965

更新时间： 2024-06-27 12:12:50

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	608K
描述
SOT-89

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中文翻译

获取价格

技术参数
数据手册

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2SD965 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

2SD965 数据手册

2SD965

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Large Collector Power Dissipation and Current

 Low Collector-Emitter Saturation Voltage

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

750

°C/W

°C

R_θJA

Thermal Resistance From Junction To Ambient

Junction Temperature

167

150

Storage Temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=100uA，I_E=0

I_C=1mA，I_B=0

V(BR)CEO

V(BR)EBO

I_CBO

I_E=10uA，I_C=0

V_CB=10V, I_E=0

V_EB=7V, I_C=0

0.1

Emitter cut-off current

I_EBO

V_CE=2V, I_C=1mA

V_CE=2V, I_C=500mA

V_CE=2V, I_C=2A

I_C=3A，I_B=100mA

h_FE1

200

150

DC current gain

h_FE2

230

150

800

h_FE3

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

V_CE=6V,I_C=50mA,f=200

MHz

V_CB=20V, I_E=0, f=1

Collector output capacitance

C_ob

MHz

CLASSIFICATION OF h_FE

Rank

Range

230-380

340-600

D965

560-800

Marking

1 / 4

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