是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.58 | 最大集电极电流 (IC): | 10 A |
配置: | Single | 最小直流电流增益 (hFE): | 55 |
JESD-609代码: | e0 | 最高工作温度: | 140 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 100 W |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 标称过渡频率 (fT): | 30 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1265N | ISC |
获取价格 |
Silicon PNP Power Transistors | |
2SA1265N | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2SA1265N | JMNIC |
获取价格 |
Silicon PNP Power Transistors | |
2SA1265N | TOSHIBA |
获取价格 |
TRANSISTOR 10 A, 140 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
2SA1265NO | ISC |
获取价格 |
Transistor | |
2SA1265N-O | TOSHIBA |
获取价格 |
TRANSISTOR 10 A, 140 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
2SA1265NR | ISC |
获取价格 |
暂无描述 | |
2SA1265N-R | TOSHIBA |
获取价格 |
TRANSISTOR 10 A, 140 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
2SA1266 | KEC |
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SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE | |
2SA1266 | SWST |
获取价格 |
小信号晶体管 |