Datasheet > 2SA1268

2SA1268

更新时间： 2023-12-06 20:03:21

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
4页	196K
描述
小信号晶体管

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2SA1268 数据手册

2SA1268

PNP Silicon Epitaxial Planar Transistor

Features

• The transistor is subdivided into two groups,

G and L according to its DC current gain

• On special request, these transistors can be

manufactured in different pin configurations

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Applications

• For high voltage applications

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

120

100

℃

Emitter Current

I_E

100

Power Dissipation

P_tot

625

150

Junction Temperature

Storage Temperature Range

T_j

- 55 to + 150

T_stg

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

200

Unit

Thermal Resistance from Junction to Ambient

℃/W

1 / 4

Dated: 24/06/2022 Rev: 05

12 3 4

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