Datasheet > 2N2329

2N2329

更新时间： 2024-02-03 11:40:17

品牌	Logo	应用领域
COMSET		/
页数	文件大小	规格书
3页	80K
描述
SILICON THYRISTORS

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技术参数
数据手册

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2N2329 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.71
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	TIN LEAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	SCR	Base Number Matches：	1

2N2329 数据手册

2N2327 thur 2N2329

SILICON THYRISTORS

All-diffused PNPN thyristors designed for grating operation in mA/µA signal

or detection circuits

Compliance to RoHS.

MAXIMUM RATINGS (*)

T_J=125°C unless otherwise noted, R_GK=1000Ω

Symbol

V_RSM(REP)

Ratings

2N2327

2N2328

2N2329

Unit

Peak reverse blocking voltage (1)

250

350

300

400

500

V_RSM(NON-

REP)

Non-repetitive peak blocking reverse

voltage (t<5.0 ms)

Forward Current RMS

(all conduction angles)

Peak Surge Current

(One-Half Cycle, 60Hz)

No Repetition Until Thermal Equilibrium

is Restored.

1.6

I_T(RMS)

I_TSM

Peak Gate Power – Forward

Average Gate Power - Forward

Peak Gate Current – Forward

Peak Gate Voltage - Forward

Peak Gate Voltage - Reverse

0.1

0.01

0.1

P_GM

P_G(AV)

I_GM

V_GFM

V_GRM

6.0

Operating Junction Temperature Range

Storage Temperature Range

T_J

T_STG

-65 to +125

-65 to +150

°C

12/11/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

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与2N2329相关器件

型号	品牌	描述	获取价格	数据表
2N2329A	NJSEMI	SILICON CONTROLLED RECTIFIERS	获取价格
2N2329A	MICROSEMI	SILICON CONTROLLED RECTIFIER	获取价格
2N2329AS	MICROSEMI	SILICON CONTROLLED RECTIFIER	获取价格
2N2329E3	MICROSEMI	Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5,	获取价格
2N2329LEADFREE	CENTRAL	Silicon Controlled Rectifier, 1.6A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-39, HE	获取价格
2N2329S	MICROSEMI	SILICON CONTROLLED RECTIFIER	获取价格