4-MBIT SmartVoltage BOOT BLOCK FAMILY
E
Table 21. AC Characteristics: WE#-Controlled Write Operations(1) (Extended Temperature)
Prod
TBE-120
TBV-80
TBV-80
TBE-120
Sym
Parameter
VCC
2.7V–3.6V(9) 3.3±0.3V(9) 5V±10%(10)
Unit
Load
50 pF 50 pF 100 pF
Notes Min Max Min Max Min Max
tAVAV
Write Cycle Time
120
0.8
110
0.8
80
ns
tPHWL
RP# High Recovery to WE#
Going Low
0.45
µs
tELWL
CE# Setup to WE# Going Low
0
0
0
ns
ns
tPHHWH
Boot Block Lock Setup to WE#
Going High
6,8
5,8
3
200
200
100
tVPWH
VPP Setup to WE#
Going High
200
90
200
90
100
60
ns
ns
tAVWH
Address Setup to WE# Going
High
tDVWH
tWLWH
tWHDX
tWHAX
Data Setup to WE# Going High
WE# Pulse Width
4
70
90
0
70
90
0
60
60
0
ns
ns
ns
ns
Data Hold Time from WE# High
4
3
Address Hold Time from WE#
High
0
0
0
tWHEH
tWHWL
tWHQV1
tWHQV2
CE# Hold Time from WE# High
WE# Pulse Width High
0
30
6
0
20
6
0
20
6
ns
ns
µs
s
Word/Byte Program Time
Erase Duration (Boot)
2,5,8
2,5,
6, 8
0.3
0.3
0.3
Erase Duration (Param)
Erase Duration (Main)
tWHQV3
tWHQV4
tQVVL
2,5,8
2,5,8
5,8
0.3
0.6
0
0.3
0.6
0
0.3
0.6
0
s
s
VPP Hold from Valid SRD
RP# VHH Hold from Valid SRD
Boot-Block Lock Delay
ns
ns
ns
tQVPH
tPHBR
6,8
0
0
0
7,8
200
200
100
52
PRELIMINARY