5秒后页面跳转
27LV256-30I/VS PDF预览

27LV256-30I/VS

更新时间: 2024-01-05 19:58:33
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
12页 64K
描述
暂无描述

27LV256-30I/VS 数据手册

 浏览型号27LV256-30I/VS的Datasheet PDF文件第1页浏览型号27LV256-30I/VS的Datasheet PDF文件第2页浏览型号27LV256-30I/VS的Datasheet PDF文件第4页浏览型号27LV256-30I/VS的Datasheet PDF文件第5页浏览型号27LV256-30I/VS的Datasheet PDF文件第6页浏览型号27LV256-30I/VS的Datasheet PDF文件第7页 
27LV256  
TABLE 1-3:  
READ OPERATION AC CHARACTERISTICS  
AC Testing Waveform:  
Output Load:  
VIH = 2.4V and VIL = 0.45V; VOH = 2.0V VOL = 0.8V  
1 TTL Load + 100 pF  
Input Rise and Fall Times: 10 ns  
Ambient Temperature:  
Commercial:  
Industrial:  
Tamb = 0˚C to +70˚C  
Tamb = -40˚C to +85˚C  
27HC256-20  
27HC256-25  
27HC256-30  
Parameter  
Sym  
Units  
Conditions  
Min  
Max  
Min  
Max  
Min  
Max  
Address to Output Delay  
CE to Output Delay  
OE to Output Delay  
tACC  
tCE  
0
200  
200  
100  
50  
0
250  
250  
125  
50  
0
300  
300  
125  
50  
ns  
ns  
ns  
ns  
CE = OE = VIL  
OE = VIL  
tOE  
CE = VIL  
CE or OE to O/P High  
Impedance  
tOFF  
Output Hold from  
Address CE or OE,  
whichever goes first  
tOH  
0
0
0
ns  
FIGURE 1-1: READ WAVEFORMS  
VIH  
Address  
VIL  
Address valid  
VIH  
CE  
VIL  
tCE(2)  
VIH  
OE  
VIL  
tOFF(1,3)  
tOH  
tOE(2)  
VOH  
Outputs  
O0 - O7  
High Z  
High Z  
Valid Output  
VOL  
tACC  
Notes: (1) tOFF is specified for OE or CE, whichever occurs first  
(2) OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE  
(3) This parameter is sampled and is not 100% tested.  
1996 Microchip Technology Inc.  
DS11020F-page 3  

与27LV256-30I/VS相关器件

型号 品牌 描述 获取价格 数据表
27LV25630IL ETC x8 EPROM

获取价格

27LV256-30IL MICROCHIP 256K (32K x 8) Low-Voltage CMOS EPROM

获取价格

27LV25630IP ETC x8 EPROM

获取价格

27LV256-30IP MICROCHIP 256K (32K x 8) Low-Voltage CMOS EPROM

获取价格

27LV25630ISO ETC x8 EPROM

获取价格

27LV256-30ISO MICROCHIP 256K (32K x 8) Low-Voltage CMOS EPROM

获取价格