Datasheet > 27C17AF-25IL

27C17AF-25IL

更新时间： 2022-11-26 04:24:45

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
8页	70K
描述
16K (2K x 8) CMOS EEPROM

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27C17AF-25IL 数据手册

28C17A

TABLE 1-4:

BYTE WRITE AC CHARACTERISTICS

AC Testing Waveform:

Output Load:

Input Rise/Fall Times:

Ambient Temperature:

VIH = 2.4V; VIL = 0.45V; VOH = 2.0V; VOL = 0.8V

1 TTL Load + 100 pF

20 ns

Commercial (C):

Tamb

0˚C to +70˚C

-40˚C to +85˚C

Industrial

(I):

Parameter

Symbol

Min

Max

Units

Remarks

Address Set-Up Time

Address Hold Time

Data Set-Up Time

Data Hold Time

tAS

tAH

100

—

µs

tDS

—

tDH

—

Write Pulse Width

Write Pulse High Time

OE Hold Time

tWPL

tWPH

tOEH

tOES

tDV

—

Note 1

Note 2

—

OE Set-Up Time

—

Data Valid Time

1000

Time to Device Busy

Write Cycle Time (28C17A)

Write Cycle Time (28C17AF)

tDB

tWC

—

0.5 ms typical

—

200

100 µs typical

Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the pos-

itive edge of CE or WE, whichever occurs ﬁrst

2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until tDH after

the positive edge of WE or CE, whichever occurs ﬁrst.

FIGURE 1-2: PROGRAMMING WAVEFORMS

VIH

Address

VIL

tAS

tAH

VIH

VIL

tWPL

tDS

CE, WE

Data In

tDH

tDV

VIH

VIL

tOES

VIH

VIL

tOEH

tDB

VOH

VOL

Rdy/Busy

Busy

Ready

tWC

DS11127G-page 4

1996 Microchip Technology Inc.

1 2 345 6 7 8

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