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27C17AF-25IL PDF预览

27C17AF-25IL

更新时间: 2022-11-26 04:24:45
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
8页 70K
描述
16K (2K x 8) CMOS EEPROM

27C17AF-25IL 数据手册

 浏览型号27C17AF-25IL的Datasheet PDF文件第1页浏览型号27C17AF-25IL的Datasheet PDF文件第2页浏览型号27C17AF-25IL的Datasheet PDF文件第4页浏览型号27C17AF-25IL的Datasheet PDF文件第5页浏览型号27C17AF-25IL的Datasheet PDF文件第6页浏览型号27C17AF-25IL的Datasheet PDF文件第7页 
28C17A  
TABLE 1-3:  
READ OPERATION AC CHARACTERISTICS  
AC Testing Waveform:  
Output Load:  
Input Rise and Fall Times:  
Ambient Temperature:  
VIH = 2.4V; VIL = 0.45V; VOH = 2.0V; VOL = 0.8V  
1 TTL Load + 100 pF  
20 ns  
Commercial (C):  
Tamb  
Tamb  
=
=
0˚C to +70˚C  
-40˚C to +85˚C  
Industrial  
(I):  
28C17A-15  
Symbol  
28C17A-20  
28C17A-25  
Parameter  
Units  
Conditions  
Min  
Max  
Min  
Max  
Min  
Max  
Address to Output Delay  
CE to Output Delay  
OE to Output Delay  
tACC  
tCE  
0
150  
150  
70  
0
200  
200  
80  
0
250  
250  
100  
70  
ns  
ns  
ns  
ns  
OE = CE = VIL  
OE = VIL  
tOE  
CE = VIL  
CE or OE High to Output  
Float  
tOFF  
50  
55  
Output Hold from Address,  
CE or OE, whichever occurs  
first.  
tOH  
0
0
0
ns  
Endurance  
1M  
1M  
1M  
cycles 25°C, Vcc =  
5.0V, Block  
Mode (Note)  
Note: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific appli-  
cation, please consult the Total Endurance Model which can be obtained on our BBS or website.  
FIGURE 1-1: READ WAVEFORMS  
VIH  
Address  
CE  
Address Valid  
VIL  
VIH  
VIL  
tCE(2)  
VIH  
VIL  
OE  
tOFF(1,3)  
tOH  
tOE(2)  
VOH  
VOL  
High Z  
High Z  
Data  
Valid Output  
tACC  
VIH  
WE  
VOL  
Notes: (1) tOFF is specified for OE or CE, whichever occurs first  
(2) OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE  
(3) This parameter is sampled and is not 100% tested  
1996 Microchip Technology Inc.  
DS11127G-page 3  

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