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27C128-20E/SO PDF预览

27C128-20E/SO

更新时间: 2024-02-24 02:17:56
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
12页 65K
描述
x8 EPROM

27C128-20E/SO 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:8 X 13.40 MM, TSOP-28针数:28
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.67
Is Samacsys:N最长访问时间:200 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e0内存密度:131072 bit
内存集成电路类型:OTP ROM内存宽度:8
功能数量:1端子数量:28
字数:16384 words字数代码:16000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:TSSOP28/32,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:13 V
认证状态:Not Qualified最大待机电流:0.0001 A
子类别:OTP ROMs最大压摆率:0.025 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

27C128-20E/SO 数据手册

 浏览型号27C128-20E/SO的Datasheet PDF文件第1页浏览型号27C128-20E/SO的Datasheet PDF文件第2页浏览型号27C128-20E/SO的Datasheet PDF文件第3页浏览型号27C128-20E/SO的Datasheet PDF文件第5页浏览型号27C128-20E/SO的Datasheet PDF文件第6页浏览型号27C128-20E/SO的Datasheet PDF文件第7页 
27C128  
TABLE 1-4:  
PROGRAMMING DC CHARACTERISTICS  
Ambient Temperature: Tamb = 25°C ± 5°C  
VCC = 6.5V ± 0.25V, VPP = 13.0V ± 0.25V  
Parameter  
Status  
Symbol  
Min  
Max.  
Units  
Conditions  
Input Voltages  
Logic”1”  
Logic”0”  
VIH  
VIL  
2.0  
-0.1  
VCC+1  
0.8  
V
V
Input Leakage  
ILI  
-10  
2.4  
10  
µA  
VIN = 0V to VCC  
Output Voltages  
Logic”1”  
Logic”0”  
VOH  
VOL  
V
V
IOH = -400 µA  
IOL = 2.1 mA  
0.45  
20  
VCC Current, program & verify  
VPP Current, program  
ICC2  
IPP2  
VH  
mA  
mA  
V
Note 1  
Note 1  
25  
A9 Product Identification  
11.5  
12.5  
Note 1: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP  
TABLE 1-5:  
PROGRAMMING AC CHARACTERISTICS  
for Program, Program Verify  
and Program Inhibit Modes  
AC Testing Waveform: VIH=2.4V and VIL=0.45V; VOH=2.0V; VOL=0.8V  
Ambient Temperature: Tamb=25°C± 5°C  
VCC= 6.5V ± 0.25V, VPP = VH = 13.0V ± 0.25V  
Parameter  
Symbol  
Min  
Max Units  
Remarks  
Address Set-Up Time  
Data Set-Up Time  
Data Hold Time  
tAS  
tDS  
2
2
µs  
µs  
µs  
µs  
ns  
µs  
µs  
µs  
µs  
µs  
ns  
tDH  
2
Address Hold Time  
Float Delay (2)  
tAH  
0
tDF  
0
130  
VCC Set-Up Time  
Program Pulse Width (1)  
CE Set-Up Time  
tVCS  
tPW  
tCES  
tOES  
tVPS  
tOE  
2
95  
2
105  
100 µs typical  
OE Set-Up Time  
2
VPP Set-Up Time  
Data Valid from OE  
2
100  
Note 1: For express algorithm, initial programming width tolerance is 100 µs ±5%.  
2: This parameter is only sampled and not 100% tested. Output float is defined as the point where data is no  
longer driven (see timing diagram).  
DS11003K-page 4  
1996 Microchip Technology Inc.  

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