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27512

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27512 数据手册

M27512

NMOS 512 Kbit (64Kb x 8) UV EPROM

NOT FOR NEW DESIGN

■ FAST ACCESS TIME: 200ns

■ EXTENDED TEMPERATURE RANGE

■ SINGLE 5V SUPPLY VOLTAGE

■ LOW STANDBY CURRENT: 40mA max

■ TTL COMPATIBLE DURING READ and

PROGRAM

■ FAST PROGRAMMING ALGORITHM

■ ELECTRONIC SIGNATURE

■ PROGRAMMING VOLTAGE: 12V

FDIP28W (F)

DESCRIPTION

The M27512 is a 524,288 bit UV erasable and

electrically programmable memory EPROM. It is

organized as 65,536 words by 8 bits.

The M27512 is housed in a 28 Pin Window Ce-

ramic Frit-Seal Dual-in-Line package. The trans-

parent lid allows the user to expose the chip to

ultraviolet light to erase the bit pattern. A new pat-

tern can then be written to the device by following

the programming procedure.

Figure 1. Logic Diagram

A0-A15

Q0-Q7

M27512

AI00765B

November 2000

1/11

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...11

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