5秒后页面跳转
2731GN-200M PDF预览

2731GN-200M

更新时间: 2024-02-24 21:00:42
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 139K
描述
RF Power Field-Effect Transistor, N-Channel

2731GN-200M 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
最高工作温度:200 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:400 W
子类别:FET RF Small Signal处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2731GN-200M 数据手册

 浏览型号2731GN-200M的Datasheet PDF文件第2页浏览型号2731GN-200M的Datasheet PDF文件第3页浏览型号2731GN-200M的Datasheet PDF文件第4页 
2731GN-200M Rev 1  
2731GN – 200M  
200 Watts - 60 Volts, 200 μs, 10%  
2700 - 3100 MHz  
GENERAL DESCRIPTION  
CASE OUTLINE  
55-QP  
Common Source  
The 2731GN-200M is an internally matched, COMMON SOURCE, class AB  
GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF  
output power at 200µs pulse width, 10% duty factor across the 2700 to 3100  
MHz band. The transistor has internal pre-match for optimal performance. This  
hermetically sealed transistor is designed for S-Band Radar applications. It  
utilizes gold metallization and eutectic attach to provide highest reliability and  
superior ruggedness.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation  
Device Dissipation @ 25°C  
400 W  
Maximum Voltage and Current  
Drain-Source Voltage (VDSS  
)
150 V  
Gate-Source Voltage (VGS)  
-8 to +0 V  
Maximum Temperatures  
Storage Temperature (TSTG  
Operating Junction Temperature  
)
-55 to +125 °C  
+200 °C  
ELECTRICAL CHARACTERISTICS @ 25°C  
Symbol Characteristics  
Pout Output Power  
Test Conditions  
Pin=12W, Freq=2.7, 2.9, 3.1 GHz  
Pin=12W, Freq=2.7, 2.9, 3.1 GHz  
Pin=12W, Freq=2.7, 2.9, 3.1 GHz  
Pin=12W, Freq=2.7, 2.9, 3.1 GHz  
Min  
200  
12.2  
42  
Typ Max Units  
225  
12.7  
50  
W
dB  
%
Gp  
Power Gain  
Drain Efficiency  
Input Return Loss  
ηd  
R/L  
-7  
dB  
VSWR-T  
Өjc  
Load Mismatch Tolerance Pout=200W, Freq=2.7 GHz  
Thermal Resistance Pulse Width=200uS, Duty=10%  
5:1  
0.6  
°C/W  
Bias Condition: Vdd=+60V, Idq=500mA peak current (Vgs= -2.0 ~ -4.5V typical)  
FUNCTIONAL CHARACTERISTICS @ 25°C  
ID(Off)  
IG(Off)  
BVDSS  
Drain leakage current  
VgS = -8V, VD = 60V  
VgS = -8V, VD = 0V  
Vgs =-8V, ID = 5mA  
5
4
mA  
mA  
V
Gate leakage current  
Drain-source breakdown voltage  
250  
Issue June 2011  
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION  
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT FACTORY GaN@Microsemi.com.  

与2731GN-200M相关器件

型号 品牌 获取价格 描述 数据表
2731-L-2511-A-000500 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Female, Plug, ROHS COMPLIANT
2731-L-2511-A-001000 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Female, Plug, ROHS COMPLIANT
2731-L-2511-A-001500 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Female, Plug, ROHS COMPLIANT
2731-L-2511-A-002000 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Female, Plug, ROHS COMPLIANT
2731-L-2511-A-002500 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Female, Plug, ROHS COMPLIANT
2731-L-2511-A-003000 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Female, Plug, ROHS COMPLIANT
2731-L-2511-A-005000 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Female, Plug, ROHS COMPLIANT
2731-L-2511-B-000500 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Female, Plug, ROHS COMPLIANT
2731-L-2511-B-001500 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Female, Plug, ROHS COMPLIANT
2731-L-2511-B-002000 SCHURTER

获取价格

Mains Power Connector, 2.5A, 250VAC, Female, Plug, ROHS COMPLIANT