2729-170

更新时间： 2024-01-23 03:17:21

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体射频双极晶体管开关雷达局域网
页数	文件大小	规格书
4页	106K
描述
170 Watts, 38 Volts, 100祍, 10% Radar 2700-2900 MHz

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中文翻译

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技术参数
数据手册

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2729-170 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F2
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.65
Base Number Matches：	1

2729-170 数据手册

2729-170R4

2729-170

170 Watts, 38 Volts, 100µs, 10%

Radar 2700-2900 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55KS-1

Common Base

The 2729-170 is an internally matched, COMMON BASE bipolar transistor

capable of providing 170 Watts of pulsed RF output power at 100µs pulse

width, 10% duty factor across the 2700 to 2900 MHz band. The transistor

prematch and test fixture has been optimized through the use of Pulsed

Automated Load Pull. This hermetically solder-sealed transistor is specifically

designed for S-band radar applications. It utilizes gold metallization and emitter

ballasting to provide high reliability and supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25°C¹

570 W

Maximum Voltage and Current

Collector to Base Voltage (BV_ces)

65 V

3.0 V

17 A

Emitter to Base Voltage (BV_ebo

Collector Current (I_c)

)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

-65 to +200 °C

+200 °C

ELECTRICAL CHARACTERISTICS @ 25°C

SYMBOL CHARACTERISTICS

TEST CONDITIONS

MIN TYP MAX UNITS

P_out

P_in

Power Output

F=2700-2900 MHz

V_cc= 38 Volts

170

Power Input

25.7

2:1

P_g

Power Gain

Pulse Width = 100 µs

Duty Factor = 10%

8.2

8.6

Collector Efficiency

Load Mismatch Tolerance¹

η_c

VSWR

F = 2900 MHz, P_o= 170 W

FUNCTIONAL CHARACTERISTICS @ 25°C

BV_ebo

Iebo

BV_ces

Ices

Emitter to Base Breakdown

Emitter to Base Leakage

Ie = 30 mA

Veb = 1.5 V

3.0

Collector to Emitter Breakdown Ic = 120 mA

Collector to Emitter Leakage

DC – Current Gain

Vce = 36 V

h_FE

Vce = 5V, Ic = 600 mA

θjc¹

°C/W

Thermal Resistance

0.30

NOTE:

1. At rated output power and pulse conditions

Issue April 2005

MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE

CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.

12 3 4

中文翻译

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与2729-170相关器件

型号	品牌	获取价格	描述	数据表
272917-003	INTEL	获取价格	8 x930A x UNIVERSAL SERIAL BUS MICROCONTROLLER
27291SL	FREESCALE	获取价格	RF Power Field Effect Transistor
27291SL	JOHANSON	获取价格	Variable Capacitor, Sapphire, 500V, 0.8pF Min, 8pF Max, Multi-Turn, Horizontal Adjuster, S
27293	JOHANSON	获取价格	CAPACITOR, VARIABLE, SAPPHIRE, 500V, 0.8pF - 8pF, VERTICAL ADJUSTER, SURFACE MOUNT
2729-300P	MICROSEMI	获取价格	300 Watts - 100μs, 10%, 36V S-Band Pulsed Rad
27295	WINCHESTER	获取价格	POWER TERMINAL 125 x 250 GRID - 6 PIN
272-9531-FT5Q	RCD	获取价格	Fixed Resistor, Wire Wound, 10W, 9530ohm, 600V, 1% +/-Tol, 5ppm/Cel,
272-9532-FT10	RCD	获取价格	Fixed Resistor, Wire Wound, 10W, 95300ohm, 600V, 1% +/-Tol, 10ppm/Cel,
272-9532-FT10W	RCD	获取价格	Fixed Resistor, Wire Wound, 10W, 95300ohm, 600V, 1% +/-Tol, 10ppm/Cel,
272-9532-FTW	RCD	获取价格	Fixed Resistor, Wire Wound, 10W, 95300ohm, 600V, 1% +/-Tol, 20ppm/Cel,

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