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2729-170 PDF预览

2729-170

更新时间: 2024-01-08 23:08:48
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体射频双极晶体管开关雷达局域网
页数 文件大小 规格书
4页 106K
描述
170 Watts, 38 Volts, 100祍, 10% Radar 2700-2900 MHz

2729-170 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.65
Base Number Matches:1

2729-170 数据手册

 浏览型号2729-170的Datasheet PDF文件第2页浏览型号2729-170的Datasheet PDF文件第3页浏览型号2729-170的Datasheet PDF文件第4页 
2729-170R4  
2729-170  
170 Watts, 38 Volts, 100µs, 10%  
Radar 2700-2900 MHz  
GENERAL DESCRIPTION  
CASE OUTLINE  
55KS-1  
Common Base  
The 2729-170 is an internally matched, COMMON BASE bipolar transistor  
capable of providing 170 Watts of pulsed RF output power at 100µs pulse  
width, 10% duty factor across the 2700 to 2900 MHz band. The transistor  
prematch and test fixture has been optimized through the use of Pulsed  
Automated Load Pull. This hermetically solder-sealed transistor is specifically  
designed for S-band radar applications. It utilizes gold metallization and emitter  
ballasting to provide high reliability and supreme ruggedness.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation  
Device Dissipation @ 25°C1  
570 W  
Maximum Voltage and Current  
Collector to Base Voltage (BVces)  
65 V  
3.0 V  
17 A  
Emitter to Base Voltage (BVebo  
Collector Current (Ic)  
)
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
-65 to +200 °C  
+200 °C  
ELECTRICAL CHARACTERISTICS @ 25°C  
SYMBOL CHARACTERISTICS  
TEST CONDITIONS  
MIN TYP MAX UNITS  
Pout  
Pin  
Power Output  
F=2700-2900 MHz  
Vcc = 38 Volts  
170  
W
W
dB  
%
Power Input  
25.7  
2:1  
Pg  
Power Gain  
Pulse Width = 100 µs  
Duty Factor = 10%  
8.2  
52  
8.6  
60  
Collector Efficiency  
Load Mismatch Tolerance1  
ηc  
VSWR  
F = 2900 MHz, Po = 170 W  
FUNCTIONAL CHARACTERISTICS @ 25°C  
BVebo  
Iebo  
BVces  
Ices  
Emitter to Base Breakdown  
Emitter to Base Leakage  
Ie = 30 mA  
Veb = 1.5 V  
3.0  
56  
18  
V
mA  
V
2
7
Collector to Emitter Breakdown Ic = 120 mA  
65  
50  
Collector to Emitter Leakage  
DC – Current Gain  
Vce = 36 V  
mA  
hFE  
Vce = 5V, Ic = 600 mA  
θjc1  
°C/W  
Thermal Resistance  
0.30  
NOTE:  
1. At rated output power and pulse conditions  
Issue April 2005  
MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE  
CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.  

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