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25TTS16STRR PDF预览

25TTS16STRR

更新时间: 2024-11-01 21:14:15
品牌 Logo 应用领域
威世 - VISHAY 栅极
页数 文件大小 规格书
7页 133K
描述
Silicon Controlled Rectifier, 25A I(T)RMS, 16000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, SMD-220, D2PAK-3

25TTS16STRR 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.12Is Samacsys:N
外壳连接:ANODE标称电路换相断开时间:110 µs
配置:SINGLE关态电压最小值的临界上升速率:500 V/us
最大直流栅极触发电流:45 mA最大直流栅极触发电压:2.5 V
最大维持电流:150 mAJESD-30 代码:R-PSSO-G2
最大漏电流:10 mA湿度敏感等级:1
通态非重复峰值电流:350 A元件数量:1
端子数量:2最大通态电流:16000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):225
认证状态:Not Qualified最大均方根通态电流:25 A
断态重复峰值电压:1600 V重复峰值反向电压:1600 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

25TTS16STRR 数据手册

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25TTS...SPbF High Voltage Series  
Vishay High Power Products  
Surface Mountable  
Phase Control SCR, 16 A  
Anode  
2
DESCRIPTION/FEATURES  
The 25TTS...SPbF High Voltage Series of  
silicon controlled rectifiers are specifically  
designed for medium power switching and  
phase control applications. The glass  
passivation technology used has reliable  
operation up to 125 °C junction temperature.  
1
3
D2PAK  
Cathode Gate  
Typical applications are in input rectification (soft  
start) and these products are designed to be  
used with Vishay HPP input diodes, switches  
and output rectifiers which are available in identical package  
outlines.  
PRODUCT SUMMARY  
VT at 16 A  
< 1.25 V  
This product has been designed and qualified for industrial  
level.  
ITSM  
300 A  
VRRM  
800 V to 1600 V  
Compliant to RoHS directive 2002/95/EC.  
Halogen-free according to IEC 61249-2-21 definition.  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
NEMA FR-4 or G10 glass fabric-based epoxy  
with 4 oz. (140 µm) copper  
3.5  
5.5  
A
Aluminum IMS, RthCA = 15 °C/W  
8.5  
13.5  
25.0  
Aluminum IMS with heatsink, RthCA = 5 °C/W  
16.5  
Note  
A = 55 °C, TJ = 125 °C, footprint 300 mm2  
T
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
16  
UNITS  
IT(AV)  
Sinusoidal waveform  
A
IRMS  
25  
V
RRM/VDRM  
ITSM  
VT  
800 to 1600  
300  
V
A
16 A, TJ = 25 °C  
1.25  
V
dV/dt  
dI/dt  
TJ  
500  
V/µs  
A/µs  
°C  
150  
- 40 to 125  
VOLTAGE RATINGS  
V
RRM, MAXIMUM PEAK  
V
DRM, MAXIMUM PEAK  
DIRECT VOLTAGE  
V
I
RRM/IDRM,  
PART NUMBER  
REVERSE VOLTAGE  
AT 125 °C  
mA  
V
25TTS08SPbF  
800  
800  
10  
25TTS12SPbF  
25TTS16SPbF  
1200  
1600  
1200  
1600  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94383  
Revision: 17-Sep-09  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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