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25ETS10STRLPBF PDF预览

25ETS10STRLPBF

更新时间: 2024-01-10 20:32:27
品牌 Logo 应用领域
威世 - VISHAY 整流二极管高压高压大电源高功率电源
页数 文件大小 规格书
7页 157K
描述
Input Rectifier Diode, 25 A

25ETS10STRLPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.46应用:HIGH VOLTAGE HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.14 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:300 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:1000 V子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

25ETS10STRLPBF 数据手册

 浏览型号25ETS10STRLPBF的Datasheet PDF文件第2页浏览型号25ETS10STRLPBF的Datasheet PDF文件第3页浏览型号25ETS10STRLPBF的Datasheet PDF文件第4页浏览型号25ETS10STRLPBF的Datasheet PDF文件第5页浏览型号25ETS10STRLPBF的Datasheet PDF文件第6页浏览型号25ETS10STRLPBF的Datasheet PDF文件第7页 
VS-25ETS..SPbF High Voltage Series  
Vishay High Power Products  
Input Rectifier Diode, 25 A  
Base  
cathode  
2
DESCRIPTION/FEATURES  
The VS-25ETS..SPbF rectifier High Voltage Series  
has been optimized for very low forward  
voltage drop, with moderate leakage. The glass  
passivation technology used has reliable  
operation up to 150 °C junction temperature.  
Typical applications are in input rectification and  
these products are designed to be used with  
Vishay HPP switches and output rectifiers which  
are available in identical package outlines.  
1
3
D2PAK  
Anode  
Anode  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
VF at 10 A  
< 1 V  
300 A  
• Compliant to RoHS directive 2002/95/EC  
• Halogen-free according to IEC 61249-2-21 definition  
• Designed and qualified for industrial level  
IFSM  
VRRM  
800 V to 1200 V  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE  
UNITS  
Capacitive input filter TA = 55 °C, TJ = 125 °C  
common heatsink of 1 °C/W  
20  
23  
A
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
UNITS  
Sinusoidal waveform  
25  
A
V
800 to 1200  
300  
A
VF  
10 A, TJ = 25 °C  
1.0  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
V
RSM, MAXIMUM NON-REPETITIVE  
I
RRM AT 150 °C  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
mA  
VS-25ETS08SPbF  
VS-25ETS10SPbF  
VS-25ETS12SPbF  
800  
1000  
1200  
900  
1100  
1300  
1
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 106 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
VALUES  
25  
UNITS  
Maximum average forward current  
IF(AV)  
250  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
300  
316  
Maximum I2t for fusing  
I2t  
A2s  
442  
Maximum I2t for fusing  
I2t  
4420  
A2s  
Document Number: 94342  
Revision: 09-Apr-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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