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25AA160 PDF预览

25AA160

更新时间: 2024-02-14 07:01:07
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 89K
描述
8K/16K 1.8V SPI Bus Serial EEPROM

25AA160 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.21
其他特性:DATA RETENTION > 200 YEARS; 4KV ESD PROTECTION; 1M ENDURANCE CYCLES最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm内存密度:16384 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:2048 words
字数代码:2000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:SPI
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.91 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

25AA160 数据手册

 浏览型号25AA160的Datasheet PDF文件第4页浏览型号25AA160的Datasheet PDF文件第5页浏览型号25AA160的Datasheet PDF文件第6页浏览型号25AA160的Datasheet PDF文件第8页浏览型号25AA160的Datasheet PDF文件第9页浏览型号25AA160的Datasheet PDF文件第10页 
25AA080/160  
transmitted, the CS must be brought high to set the  
write enable latch. If the write operation is initiated  
immediately after the WREN instruction without CS  
being brought high, the data will not be written to the  
array because the write enable latch will not have been  
properly set.  
2.3  
Write Status Register (WRSR)  
The WRSR instruction allows the user to select one of  
four protection options for the array by writing to the  
appropriate bits in the status register. The array is  
divided up into four segments. The user has the ability  
to write protect none, one, two, or all four of the seg-  
ments of the array.The partitioning is controlled as illus-  
trated in table below.  
Once the write enable latch is set, the user may pro-  
ceed by setting the CS low, issuing a write instruction,  
followed by the 16-bit address, with the five (25AA080)  
or six (25AA080) MSBs of the address being don’t care  
bits, and then the data to be written. Up to 16 bytes of  
data can be sent to the 25AA080/160 before a write  
cycle is necessary. The only restriction is that all of the  
bytes must reside in the same page. A page address  
begins with XXXX XXXX XXXX 0000 and ends with  
XXXX XXXX XXXX 1111. If the internal address  
counter reaches XXXX XXXX XXXX 1111 and the  
clock continues, the counter will roll back to the first  
address of the page and overwrite any data in the page  
that may have been written.  
See Figure 3-6 for WRSR timing sequence.  
TABLE 2-3:  
ARRAY PROTECTION  
Array Addresses  
Write Protected  
BP1  
BP0  
0
0
0
1
none  
upper 1/4  
300h-3FFh for 25AA080  
600h-7FFh for 25AA160  
1
1
0
1
upper 1/2  
200h-3FFh for 25AA080  
400h-7FFh for 25AA160  
For the data to be actually written to the array, the CS  
must be brought high after the least significant bit (D0)  
th  
of the n data byte has been clocked in. If CSis brought  
all  
high at any other time, the write operation will not be  
completed. See Figure 3-3 and Figure 3-4 for more  
detailed illustrations on the byte write sequence and the  
page write sequence, respectively.  
000h-3FFh for 25AA080  
000h-7FFh for 25AA160  
3.0  
DEVICE OPERATION  
While the write is in progress, the status register may  
be read to check the status of the WPEN, WIP, WEL,  
BP1, and BP0 bits. A read attempt of a memory array  
location will not be possible during a write cycle. When  
a write cycle is completed, the write enable latch is  
reset.  
3.1  
Clock and Data Timing  
Data input on the SI pin is latched on the rising edge of  
SCK. Data is output on the SO pin after the falling edge  
of SCK.  
3.2  
Read Sequence  
3.4  
Data Protection  
The part is selected by pulling CS low. The 8-bit read  
instruction is transmitted to the 25AA080/160 followed  
by the 16-bit address, with the five (25AA160) or six  
(25AA080) MSBs of the address being don’t care bits.  
After the correct read instruction and address are sent,  
the data stored in the memory at the selected address  
is shifted out on the SO pin. The data stored in the  
memory at the next address can be read sequentially  
by continuing to provide clock pulses. The internal  
address pointer is automatically incremented to the  
next higher address after each byte of data is shifted  
out. When the highest address is reached ($3FF for  
25AA080, $7FF for 25AA160) the address counter rolls  
over to address $000 allowing the read cycle to be con-  
tinued indefinitely. The read operation is terminated by  
setting CS high (see Figure 3-1).  
The following protection has been implemented to pre-  
vent inadvertent writes to the array:  
• The write enable latch is reset on power-up.  
• A write enable instruction must be issued to set  
the write enable latch.  
• After a successful byte write, page write, or status  
register write, the write enable latch is reset.  
• CS must be set high after the proper number of  
clock cycles to start an internal write cycle.  
• Access to the array during an internal write cycle  
is ignored and programming is continued.  
3.5  
Power On State  
The 25AA080/160 powers on in the following state:  
• The device is in low power standby mode (CS=1).  
• The write enable latch is reset.  
• SO is in high impedance state.  
3.3  
Write Sequence  
Prior to any attempt to write data to the 25AA080/160,  
the write enable latch must be set by issuing the WREN  
instruction (see Figure 3-2). This is done by setting CS  
low and then clocking the proper instruction into the  
25AA080/160. After all eight bits of the instruction are  
• A low level on CS is required to enter active state.  
1996 Microchip Technology Inc.  
Preliminary  
DS21146D-page 7  

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