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25AA128T-E/MF PDF预览

25AA128T-E/MF

更新时间: 2024-01-16 19:47:34
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
26页 536K
描述
128K SPI Bus Serial EEPROM

25AA128T-E/MF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:4.40 MM, PLASTIC, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:6 weeks
风险等级:5.57Is Samacsys:N
最大时钟频率 (fCLK):10 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.4 mm
内存密度:131072 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:16384 words字数代码:16000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:SPI最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3 mm
最长写入周期时间 (tWC):5 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

25AA128T-E/MF 数据手册

 浏览型号25AA128T-E/MF的Datasheet PDF文件第7页浏览型号25AA128T-E/MF的Datasheet PDF文件第8页浏览型号25AA128T-E/MF的Datasheet PDF文件第9页浏览型号25AA128T-E/MF的Datasheet PDF文件第11页浏览型号25AA128T-E/MF的Datasheet PDF文件第12页浏览型号25AA128T-E/MF的Datasheet PDF文件第13页 
25AA128/25LC128  
The Write Enable Latch (WEL) bit indicates the status  
of the write enable latch and is read-only. When set to  
a ‘1’, the latch allows writes to the array, when set to a  
0’, the latch prohibits writes to the array. The state of  
this bit can always be updated via the WREN or WRDI  
commands regardless of the state of write protection  
on the STATUS register. These commands are shown  
in Figure 2-4 and Figure 2-5.  
2.5  
Read Status Register Instruction  
(RDSR)  
The Read Status Register instruction (RDSR) provides  
access to the STATUS register. The STATUS register  
may be read at any time, even during a write cycle. The  
STATUS register is formatted as follows:  
TABLE 2-2:  
STATUS REGISTER  
The Block Protection (BP0 and BP1) bits indicate  
which blocks are currently write-protected. These bits  
are set by the user issuing the WRSRinstruction. These  
bits are nonvolatile, and are shown in Table 2-3.  
7
6
X
5
X
4
X
3
2
1
0
W/R  
W/R W/R  
R
R
WPEN  
BP1 BP0 WEL WIP  
See Figure 2-6 for the RDSRtiming sequence.  
W/R = writable/readable. R = read-only.  
The Write-In-Process (WIP) bit indicates whether the  
25XX128 is busy with a write operation. When set to a  
1’, a write is in progress, when set to a ‘0’, no write is  
in progress. This bit is read-only.  
FIGURE 2-6: READ STATUS REGISTER TIMING SEQUENCE (RDSR)  
CS  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
SCK  
Instruction  
0
0
0
0
0
1
0
1
SI  
Data from STATUS Register  
High-Impedance  
7
6
5
4
3
2
1
0
SO  
DS21831C-page 10  
© 2007 Microchip Technology Inc.  

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