Datasheet > 2501NZ

2501NZ

更新时间： 2024-02-07 22:25:30

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	110K
描述
Dual N-Channel 2.5V Specified PowerTrench MOSFET

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技术参数
数据手册

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2501NZ 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	2.13
连接器类型：	AUDIO/RCA CONNECTOR	联系完成配合：	NOT SPECIFIED
联系完成终止：	TIN	DIN 符合性：	NO
IEC 符合性：	NO	JESD-609代码：	e3
MIL 符合性：	NO	安装类型：	PANEL
极数：	1	端口数量：	1
选件：	GENERAL PURPOSE	Base Number Matches：	1

2501NZ 数据手册

October 2002

FDW2501NZ

Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

This N-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V – 12V).

• 5.5 A, 20 V.

R_DS(ON)= 18 mΩ @ V_GS= 4.5V

_DS(ON)= 25 mΩ @ V_GS= 2.5V

• Extended V_GSSrange (±12V) for battery applications

• ESD protection diode (note 3)

Applications

• Load switch

• High performance trench technology for extremely

low R_DS(ON)

• Motor drive

• DC/DC conversion

• Power management

• Low profile TSSOP-8 package

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±12

(Note 1a)

5.5

P_D

Power Dissipation

(Note 1a)

(Note 1b)

1.0

0.6

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

100

125

R_θJA

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

2501NZ

FDW2501NZ

13’’

12mm

3000 units

FDW2501NZ Rev E1 (W)

2002 Fairchild Semiconductor Corporation

12 3 4 5

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