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24LC024-E/MNY PDF预览

24LC024-E/MNY

更新时间: 2024-11-20 15:29:43
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
30页 517K
描述
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8

24LC024-E/MNY 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFN
包装说明:HVSON,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.68
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PDSO-N8
JESD-609代码:e4长度:3 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:256X8
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行:SERIAL峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:0.8 mm
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:2 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

24LC024-E/MNY 数据手册

 浏览型号24LC024-E/MNY的Datasheet PDF文件第2页浏览型号24LC024-E/MNY的Datasheet PDF文件第3页浏览型号24LC024-E/MNY的Datasheet PDF文件第4页浏览型号24LC024-E/MNY的Datasheet PDF文件第5页浏览型号24LC024-E/MNY的Datasheet PDF文件第6页浏览型号24LC024-E/MNY的Datasheet PDF文件第7页 
24AA024/24LC024/24AA025/24LC025  
2K I2CSerial EEPROM  
Description:  
Device Selection Table  
Part  
Number  
VCC  
Range  
Max  
Clock  
Temp. Write  
The Microchip Technology Inc. 24AA024/24LC024/  
Range Protect  
24AA025/24LC025 is a 2 Kbit Serial Electrically  
24AA024 1.7V-5.5V 400 kHz(1)  
24AA025 1.7V-5.5V 400 kHz(1)  
I
Yes  
No  
Erasable PROM with a voltage range of 1.7V to 5.5V.  
The device is organized as a single block of 256 x 8-bit  
memory with a 2-wire serial interface. Low current  
design permits operation with typical standby and  
active currents of only 1 μA and 1 mA, respectively.  
The device has a page write capability for up to 16  
bytes of data. Functional address lines allow the  
connection of up to eight 24AA024/24LC024/  
24AA025/24LC025 devices on the same bus for up to  
16K bits of contiguous EEPROM memory. The device  
is available in the standard 8-pin PDIP, 8-pin SOIC  
(3.90 mm), TSSOP, 2x3 DFN and TDFN and MSOP  
packages. The 24AA025/24LC025 is also available in  
the 6-lead SOT-23 package.  
I
24LC024 2.5V-5.5V  
24LC025 2.5V-5.5V  
400 kHz  
400 kHz  
I, E  
I, E  
Yes  
No  
Note 1: 100 kHz for VCC < 2.5V  
Features:  
• Single Supply with Operation from 1.7V to 5.5V  
for 24AA024/24AA025 Devices, 2.5V for  
24LC024/24LC025 Devices  
• Low-Power CMOS Technology:  
- Read current 1 mA, typical  
Package Types  
- Standby current 1 μA, typical  
• 2-Wire Serial Interface, I2C™ Compatible  
• Cascadable up to Eight Devices  
PDIP/SOIC/TSSOP/MSOP  
DFN/TDFN  
A0  
A1  
1
VCC  
WP  
8
7
6
5
A0  
1
8
VCC  
• Schmitt Trigger Inputs for Noise Suppression  
• Output Slope Control to Eliminate Ground Bounce  
• 100 kHz and 400 kHz Clock Compatibility  
• Page Write Time 5 ms Maximum  
• Self-timed Erase/Write Cycle  
2
3
4
A1  
A2  
2
3
4
7
6
5
WP  
SCL  
SDA  
A2  
VSS  
SCL  
SDA  
VSS  
SOT-23  
• 16-Byte Page Write Buffer  
SCL  
VCC  
A0  
6
1
2
3
• Hardware Write-Protect on 24XX024 Devices  
• ESD Protection >4,000V  
VSS  
5
• More than 1 Million Erase/Write Cycles  
• Data Retention >200 years  
4
A1  
SDA  
Note:  
WP pin is not internally connected on the  
24XX025.  
• Factory Programming Available  
• Packages include 8-lead PDIP, SOIC, TSSOP,  
DFN, TDFN and MSOP  
Block Diagram  
• 6-Lead SOT-23 Package, 24XX025 only  
• Pb-Free and RoHS Compliant  
Temperature Ranges:  
A0 A1 A2  
WP*  
HV Generator  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
- Industrial (I): -40°C to +85°C  
- Automotive (E): -40°C to +125°C  
EEPROM  
Array  
XDEC  
SDA  
SCL  
Write-Protect  
Circuitry  
VCC  
VSS  
YDEC  
Sense Amp.  
R/W Control  
© 2009 Microchip Technology Inc.  
DS21210N-page 1  

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