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243NQ080 PDF预览

243NQ080

更新时间: 2024-02-14 07:45:02
品牌 Logo 应用领域
桑德斯 - SMC 局域网二极管
页数 文件大小 规格书
4页 225K
描述
Low forward voltage drop

243NQ080 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:MODULE
包装说明:R-PUFM-X1针数:1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.52
其他特性:HIGH RELIABILITY, FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PUFM-X1最大非重复峰值正向电流:25500 A
元件数量:1相数:1
端子数量:1最大输出电流:240 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:80 V
表面贴装:NO技术:SCHOTTKY
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:40Base Number Matches:1

243NQ080 数据手册

 浏览型号243NQ080的Datasheet PDF文件第1页浏览型号243NQ080的Datasheet PDF文件第3页浏览型号243NQ080的Datasheet PDF文件第4页 
SANGDEST  
MICROELECTRONICS  
243NQ.../R-1 SERIES  
Technical Data  
Data Sheet N1205, Rev. A  
Green Products  
Maximum Ratings:  
Characteristics  
Symbol  
Condition  
Max.  
Units  
Peak Inverse Voltage  
VRWM  
-
80  
243NQ080/R-1  
V
100 243NQ100/R-1  
240  
Max. Average Forward  
Current  
IF(AV)  
50% duty cycle @TC =120°C,  
rectangular wave form  
A
Max. Peak One Cycle Non-  
Repetitive Surge Current  
(per leg)  
IFSM  
EAS  
8.3 ms, half Sine pulse  
3960  
15  
A
Non-Repetitive  
Energy  
Avalanche  
TJ=25,IAS=1A,L=30 mH  
mJ  
Current decaying linearly to  
zero in 1 μsec Frequency  
limited by TJ max. VA=1.5×  
VR typical  
Repetitive Avalanche Current  
IAR  
1
A
Electrical Characteristics:  
Characteristics  
Max. Forward Voltage Drop*  
Symbol  
Condition  
Max.  
0.86  
1.01  
Units  
@ 240A, Pulse, TJ = 25 °C  
@ 480A, Pulse, TJ = 25 °C  
@ 240A, Pulse, TJ = 125 °C  
@ 480A, Pulse, TJ = 125 °C  
VF1  
V
0.72  
0.86  
VF2  
V
Max. Reverse Current (per  
leg) *  
IR1  
IR2  
6
80  
mA  
mA  
@VR = rated V  
R
TJ = 25 °C  
TJ = 125 °C  
@VR = rated V  
R
Max. Junction Capacitance  
(per leg)  
@VR = 5V, TC = 25 °C  
fSIG = 1MHz  
CT  
5500  
pF  
Typical Series Inductance  
(per leg)  
Max. Voltage Rate of Change  
Measured lead to lead 5 mm  
from package body  
-
LS  
5.0  
nH  
dv/dt  
10,000  
V/μs  
z
Pulse Width < 300µs, Duty Cycle <2%  
Thermal-Mechanical Specifications:  
Characteristics  
Max. Junction Temperature  
Max. Storage Temperature  
Symbol  
TJ  
Condition  
Specification  
-55 to +175  
-55 to +175  
Units  
°C  
°C  
-
-
Tstg  
Maximum Thermal  
Resistance Junction to Case  
DC operation  
0.20  
0.15  
RθJC  
Rθcs  
°C/W  
°C/W  
Typical Thermal Resistance,  
case to Heat Sink  
Mounting surface, smooth  
and greased  
Mounting  
Torque  
Terminal  
Torque  
23(min)  
29(max)  
35(min)  
46(max)  
Mounting Torque  
TM  
Non-lubricated threads  
Kg-cm  
g
Approximate Weight  
Case Style  
wt  
-
25.6  
PRM1-1  
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •  
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn •  

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