Datasheet > 23A256-E/SN/ST

23A256-E/SN/ST

更新时间： 2022-02-26 11:03:45

品牌	Logo	应用领域
美国微芯 - MICROCHIP		静态存储器
页数	文件大小	规格书
28页	609K
描述
256K SPI Bus Low-Power Serial SRAM

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23A256-E/SN/ST 数据手册

23A256/23K256

TABLE 1-2:

AC CHARACTERISTICS (CONTINUED)

Industrial (I):

Automotive (E): TA = -40°C to +125°C

TA = -40°C to +85°C

AC CHARACTERISTICS

Param.

Sym.

Characteristic

Min.

Max.

Units

Test Conditions

VCC 1.5V (I-Temp)

No.

TDIS

Output disable time

—

VCC 1.8V (I-Temp)

VCC 3.0V (E-Temp)

VCC 3.0V (I-Temp)

THS

THH

THZ

THV

HOLD setup time

—

HOLD hold time

HOLD low to output High-Z

HOLD high to output valid

Note 1: This parameter is periodically sampled and not 100% tested.

TABLE 1-3:

AC TEST CONDITIONS

AC Waveform:

Input pulse level

Input rise/fall time

0.1 VCC to 0.9 VCC

5 ns

-40°C to +125°C

—

Operating temperature

CL = 100 pF

Timing Measurement Reference Level:

Input

0.5 VCC

Output

DS22100F-page 4

 2008-2011 Microchip Technology Inc.

1 2 345 6 7...28

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