Datasheet > 22V10

22V10

更新时间： 2024-11-22 22:10:59

品牌	Logo	应用领域
莱迪思 - LATTICE		/
页数	文件大小	规格书
29页	387K
描述
High Performance E2CMOS PLD Generic Array Logic

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

22V10 数据手册

Specifications GAL22V10

GAL22V10

High Performance E²CMOS PLD

Generic Array Logic™

Functional Block Diagram

Features

• HIGH PERFORMANCE E²CMOS^®TECHNOLOGY

— 4 ns Maximum Propagation Delay

— Fmax = 250 MHz

RESET

I/CLK

OLMC

I/O/Q

— 3.5 ns Maximum from Clock Input to Data Output

— UltraMOS^®Advanced CMOS Technology

• ACTIVE PULL-UPS ON ALL PINS

• COMPATIBLE WITH STANDARD 22V10 DEVICES

— Fully Function/Fuse-Map/Parametric Compatible

with Bipolar and UVCMOS 22V10 Devices

I/O/Q

• 50% to 75% REDUCTION IN POWER VERSUS BIPOLAR

— 90mA Typical Icc on Low Power Device

— 45mA Typical Icc on Quarter Power Device

• E²CELL TECHNOLOGY

— Reconfigurable Logic

— Reprogrammable Cells

— 100% Tested/100% Yields

— High Speed Electrical Erasure (<100ms)

— 20 Year Data Retention

I/O/Q

• TEN OUTPUT LOGIC MACROCELLS

— Maximum Flexibility for Complex Logic Designs

I/O/Q

• PRELOAD AND POWER-ON RESET OF REGISTERS

— 100% Functional Testability

• APPLICATIONS INCLUDE:

— DMA Control

— State Machine Control

— High Speed Graphics Processing

— Standard Logic Speed Upgrade

• ELECTRONIC SIGNATURE FOR IDENTIFICATION

ESCRIPTION

PRESET

Pin Configuration

Description

DIP

The GAL22V10, at 4ns maximum propagation delay time, combines

a high performance CMOS process with Electrically Erasable (E²)

floating gate technology to provide the highest performance avail-

able of any 22V10 device on the market. CMOS circuitry allows

the GAL22V10 to consume much less power when compared to

bipolar 22V10 devices. E²technology offers high speed (<100ms)

erase times, providing the ability to reprogram or reconfigure the

device quickly and efficiently.

PLCC

Vcc

I/CLK

I/O/Q

GAL

22V10

The generic architecture provides maximum design flexibility by

allowing the Output Logic Macrocell (OLMC) to be configured by

the user. The GAL22V10 is fully function/fuse map/parametric com-

patible with standard bipolar and CMOS 22V10 devices.

GAL22V10

Top View

I/O/Q

Unique test circuitry and reprogrammable cells allow completeAC,

DC, and functional testing during manufacture. As a result, Lat-

tice Semiconductor delivers 100% field programmability and func-

tionality of all GAL products. In addition, 100 erase/write cycles and

data retention in excess of 20 years are specified.

GND

to change without notice.

LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.

Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com

August 2000

22v10_06

12 3 4 5 6 7...29

中文翻译

下载PDF

与22V10相关器件

型号	品牌	获取价格	描述	数据表
22V10-15/BLA	ETC	获取价格	Electrically-Erasable PLD
22V10CRPDB-15	ETC	获取价格	UV-Erasable/OTP PLD
22V10CRPDB-20	ETC	获取价格	UV-Erasable/OTP PLD
22V10CRPDB-25	ETC	获取价格	UV-Erasable/OTP PLD
22V10CRPDB-30	ETC	获取价格	UV-Erasable/OTP PLD
22V10CRPDC-15	ETC	获取价格	UV-Erasable/OTP PLD
22V10CRPDC-20	ETC	获取价格	UV-Erasable/OTP PLD
22V10CRPDC-25	MAXWELL	获取价格	EE PLD,
22V10CRPDC-30	ETC	获取价格	UV-Erasable/OTP PLD
22V10CRPDE-15	MAXWELL	获取价格	EE PLD,

与22V10相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

22V10

22V10 数据手册

与22V10相关器件

与22V10相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

22V10

22V10 数据手册

与22V10相关器件

与22V10相关文章

您还可以找

您在本页遇到什么问题？