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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 2151693-5 | TE |
获取价格 |
IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION |
|
| 2151693-6 | TE |
获取价格 |
IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION |
|
| 2151693-7 | TE |
获取价格 |
IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION |
|
| 21517 | MOLEX |
获取价格 |
Barrier Strip Terminal Block, 30A, 2 Row(s), 1 Deck(s) |
|
| 21517-60 | MOLEX |
获取价格 |
Barrier Strip Terminal Block |
|
| 21517-66 | MOLEX |
获取价格 |
Barrier Strip Terminal Block |
|
| 21517-C | MOLEX |
获取价格 |
Barrier Strip Terminal Block, 30A, 2 Row(s), 1 Deck(s) |
|
| 21518 | MOLEX |
获取价格 |
Barrier Strip Terminal Block, 30A, 2 Row(s), 1 Deck(s) |
|
| 21518-58 | MOLEX |
获取价格 |
Barrier Strip Terminal Block, 30A, 2 Row(s), 1 Deck(s) |
|
| 2151886-1 | TE |
获取价格 |
IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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