Datasheet > 20UT04_12

20UT04_12

更新时间： 2022-03-29 05:09:44

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	135K
描述
High Performance Schottky Generation 5.0, 20 A

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20UT04_12 数据手册

VS-20UT04, VS-20WT04FN

www.vishay.com

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

I_F(AV)

50 % duty cycle at T_C= 153 °C, rectangular waveform

Following any rated load

condition and with rated

5 μs sine or 3 μs rect. pulse

900

Maximum peak one cycle

non-repetitive surge current

I_FSM

_RRMapplied ⁽¹⁾

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 7 A, L = 4.4 mH

220

108

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

Limited by frequency of operation and time pulse duration

so that T_J< T_Jmax. I_ASat T_Jmax. as a function of time pulse

_ASat

T_Jmax.

Note

(1)

Measured connecting 2 anode pins

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

TYP.

MAX. UNITS

10 A

0.505

0.540

T_J= 25 °C

20 A

0.570

0.610

(1)(2)

Forward voltage drop

V_FM

10 A

0.415

0450

T_J= 125 °C

20 A

0.520

0.580

T_J= 25 °C

100

μA

(1)

Reverse leakage current

I_RM

C_T

V_R= Rated V_R

T_J= 125 °C

Junction capacitance

V_R= 5 V_DC(test signal range 100 kHz to 1 MHz), 25 °C

Measured lead to lead 5 mm from package body

Rated V_R

1900

Series inductance

L_S

Maximum voltage rate of change

dV/dt

10 000

V/μs

Notes

(1)

Pulse width < 300 μs, duty cycle < 2 %

Only 1 anode pin connected

(2)

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and

storage temperature range

T_J, T_Stg

- 55 to 175

°C

Maximum thermal resistance,

junction to case

R_thJC

R_thCS

DC operation

1.2

0.3

°C/W

Typical thermal resistance,

case to heatsink

Approximate weight

Marking device

0.07

oz.

Case style I-PAK

Case style D-PAK

20UT04

20WT04FN

Revision: 03-Nov-11

Document Number: 94573

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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