VS-20UT04, VS-20WT04FN
Vishay Semiconductors
High Performance Schottky Generation 5.0, 20 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
I-PAK(TO-251AA)
D-PAK(TO-252AA)
Base
cathode
4, 2
Base
cathode
4, 2
• Negligible switching losses
3
3
1
1
Anode
Anode
Anode
Anode
• Submicron trench technology
VS-20UT04
VS-20WT04FN
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
PRODUCT SUMMARY
D-PAK (TO-252AA),
I-PAK (TO-251AA)
• Specific for PV cells bypass diode
• High efficiency SMPS
• High frequency switching
• Output rectification
Package
IF(AV)
VR
20 A
45 V
VF at IF
0.53 V
• Reverse battery protection
• Freewheeling
I
RM max.
7 mA at 125 °C
175 °C
TJ max.
Diode variation
EAS
Single die
108 mJ
• DC/DC systems
• Increased power density systems
Note
•
VF measured at 125 °C, connecting 2 anode pins
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
UNITS
VRRM
45
V
20 Apk, TJ = 125 °C
(typical, measured connecting 2 anode pins)
VF
TJ
0.480
V
Range
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
VS-20UT04
VS-20WT04FN
SYMBOL
TEST CONDITIONS
UNITS
Maximum DC reverse voltage
VR
TJ = 25 °C
45
V
Document Number: 94573
Revision: 04-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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