Datasheet > 20UT04FNTR

20UT04FNTR

更新时间： 2022-09-15 00:28:22

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	154K
描述
High Performance Schottky Generation 5.0, 20 A

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20UT04FNTR 数据手册

VS-20UT04, VS-20WT04FN

Vishay Semiconductors

High Performance Schottky Generation 5.0, 20 A

FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

• Optimized V_Fvs. I_Rtrade off for high efficiency

• Increased ruggedness for reverse avalanche capability

• RBSOA available

I-PAK(TO-251AA)

D-PAK(TO-252AA)

Base

cathode

4, 2

Base

cathode

4, 2

• Negligible switching losses

Anode

• Submicron trench technology

VS-20UT04

VS-20WT04FN

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

PRODUCT SUMMARY

D-PAK (TO-252AA),

I-PAK (TO-251AA)

• Specific for PV cells bypass diode

• High efficiency SMPS

• High frequency switching

• Output rectification

Package

I_F(AV)

V_R

20 A

45 V

V_Fat I_F

0.53 V

• Reverse battery protection

• Freewheeling

_RMmax.

7 mA at 125 °C

175 °C

T_Jmax.

Diode variation

E_AS

Single die

108 mJ

• DC/DC systems

• Increased power density systems

Note

•

V_Fmeasured at 125 °C, connecting 2 anode pins

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

V_RRM

20 Apk, T_J= 125 °C

(typical, measured connecting 2 anode pins)

V_F

T_J

0.480

Range

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

VS-20UT04

VS-20WT04FN

SYMBOL

TEST CONDITIONS

UNITS

Maximum DC reverse voltage

V_R

T_J= 25 °C

Document Number: 94573

Revision: 04-Jan-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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