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20KPA160CB PDF预览

20KPA160CB

更新时间： 2024-12-01 21:06:11
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
6页 845K
描述
Trans Voltage Suppressor Diode, 20000W, 160V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

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20KPA160CB 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.73
其他特性：UL RECOGNIZED最小击穿电压：178.7 V
外壳连接：ISOLATED最大钳位电压：258 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-PALF-W2
JESD-609代码：e3湿度敏感等级：2
最大非重复峰值反向功率耗散：20000 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：260极性：BIDIRECTIONAL
最大功率耗散：8 W认证状态：Not Qualified
最大重复峰值反向电压：160 V子类别：Transient Suppressors
表面贴装：NO技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

20KPA160CB 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 20000W > 20KPA series  
RoHS  
20KPA Series  
Description  
Uni-directional  
The 20KPA Series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Features  
Bi-directional  
• VBR @TJ= VBR@25°C × (1+αT  
x (TJ - 25))  
lines in accordance with  
IEC 61000-4-2 (IEC801-2)  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4 (IEC801-4)  
• Low incremental surge  
resistance  
(αT:Temperature Coefficient)  
• Glass passivated chip  
junction in P600 package  
• 20000W peak pulse  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
Agency Approvals  
• Typical IR less than 2μA  
above 49V  
AGENCY  
AGENCY FILE NUMBER  
E230531  
• High temperature  
soldering guaranteed:  
260°C/40 seconds /  
0.375”,(9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
• Plastic package has  
underwriters laboratory  
flammability classification  
94V-O  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to BV min  
• Excellent clamping  
capability  
•Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
Maximum Ratings andThermal Characteristics  
(TA=25°C unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
Unit  
W
Peak Pulse Power Dissipation by  
10/1000μsTest Waveform (Fig.2)  
(Note 1)  
20000  
Steady State Power Dissipation on  
Inifinite Heat Sink atTL=75ºC (Fig. 6)  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
PD  
8.0  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
Only (Note 2)  
IFSM  
400  
15kV(Air), 8kV (Contact)  
Operating Junction and Storage  
Temperature Range  
• ESD protection of data  
TJ, TSTG -55 to 150  
°C  
Applications  
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
8.0  
°C/W  
°C/W  
TVS devices are ideal for the protection of I/O interfaces,  
VCC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
TypicalThermal Resistance Junction  
to Ambient  
40  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTA = 25°C per Fig. 3.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
Functional Diagram  
Additional Information  
Datasheet  
Resources  
Samples  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2013 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 09/13/13  
123456

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