Datasheet > 2010

2010

更新时间： 2024-11-28 02:55:35

品牌	Logo	应用领域
GHZTECH		微波
页数	文件大小	规格书
3页	277K
描述
10 Watt - 28 Volts, Class C Microwave 2000 MHz

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2010 数据手册

2010

10 Watt - 28 Volts, Class C

Microwave 2000 MHz

GENERAL DESCRIPTION

CASE OUTLINE

The 2010 is a COMMON BASE transistor capable of providing 10 Watts

Class C, RF output power at 2000 MHz. Gold metalization and diffused

ballasting are used to provide high reliability and supreme ruggedness. The

transistor uses a fully hermetic High Temperature Solder Sealed package.

55BT-1

, Style

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC

30 Watts

Maximum Voltage and Current

BVces

BVebo

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

50 Volts

3.5 Volts

2.0 A

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 2 GHz

Watt

Pout

Vcb = 28 Volts

Po= 10 Watts

As Above

8.0

7.0

η_c

VSWR₁

20:1

F = 2 GHz, Po = 10 W

Collector to Emitter Breakdown Ic = 20 mA

3.5

Volts

BVces

BVcbo

BVebo

Icbo

h_FE

Cob

Collector to Base Breakdown

Emitter to Base Breakdown

Collector to Base Current

Current Gain

Ic = 4 mA

Ie = 4 mA

Vcb = 28 Volts

Vce = 5 V, Ic = 400 mA

F = 1 MHz, Vcb = 28 V

4.0

6.0

Output Capacitance

^oC/W

Thermal Resistance

θjc

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

12 3

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