Datasheet > 1SS270

1SS270

更新时间： 2024-11-15 06:21:35

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
3页	313K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

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数据手册

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1SS270 数据手册

1SS270

SILICON EPITAXIAL PLANAR DIODE

Band Swithing Diode

Features

PINNING

• Extremely small surface mounting type

• High reliability

DESCRIPTION

Cathode

Anode

Applications

• High frequency switching

Top View

Marking Code: "K"

Simplified outline SOD-523 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_R

Value

Unit

Reverse Voltage

Forward Current

I_F

100

Junction Temperature

Storage Temperature Range

T_J

125

T_stg

- 55 to + 125

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Max.

Unit

Forward Voltage

at I_F= 10 mA

Reverse Current

at V_R= 25 V

I_R

Ω

Capacitance Between Terminals

at V_R= 6 V, f = 1 MHz

C_T

R_F

1.2

Forward Operating Resistance

at I_F= 2 mA, f = 100 MHz

0.7

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 23/11/2006

12 3

中文翻译

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