5秒后页面跳转
1SS199TD PDF预览

1SS199TD

更新时间: 2024-02-14 09:14:12
品牌 Logo 应用领域
日立 - HITACHI 肖特基二极管开关
页数 文件大小 规格书
5页 20K
描述
Mixer Diode, Silicon, DO-34

1SS199TD 技术参数

生命周期:Transferred包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.26
外壳连接:ISOLATED配置:SINGLE
最大二极管电容:3 pF二极管元件材料:SILICON
二极管类型:MIXER DIODEJESD-30 代码:O-LALF-W2
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
表面贴装:NO技术:SCHOTTKY
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1SS199TD 数据手册

 浏览型号1SS199TD的Datasheet PDF文件第1页浏览型号1SS199TD的Datasheet PDF文件第3页浏览型号1SS199TD的Datasheet PDF文件第4页浏览型号1SS199TD的Datasheet PDF文件第5页 
1SS199  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Value  
Unit  
V
Reverse voltage  
Average rectified current  
Junction temperature  
Storage temperature  
VR  
IO  
30  
15  
mA  
°C  
Tj  
125  
Tstg  
–55 to +125  
°C  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
mA  
µA  
pF  
Test Condition  
VF = 1V  
Forward current  
Reverse current  
Capacitance  
Rectifier efficiency  
IF  
IR  
C
η
3.0  
100  
3.0  
VR = 10V  
VR = 1V, f = 1MHz  
70  
%
Vin = 2Vrms, f = 40MHz,RL = 5k, CL  
= 20pF  
ESD-Capability  
70  
V
*C = 200pF, Both forward and  
reverse direction 1 pulse.  
Note: Failure criterion; IR 200µA at VR = 10V  

与1SS199TD相关器件

型号 品牌 描述 获取价格 数据表
1SS199TDX HITACHI Mixer Diode, Silicon, DO-34

获取价格

1SS199TE HITACHI Mixer Diode, Silicon, DO-34

获取价格

1SS199TJ HITACHI Mixer Diode, Silicon

获取价格

1SS1CAB107MAP6L007 SAMWHA Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 16V, 20% +Tol, 20% -Tol, 100uF

获取价格

1SS1GAB106MAP04007 SAMWHA Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 40V, 20% +Tol, 20% -Tol, 10uF,

获取价格

1SS1GAB106MAS04007 SAMWHA Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 40V, 20% +Tol, 20% -Tol, 10uF,

获取价格