生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.83 | 其他特性: | HIGH RELIABILITY |
配置: | SINGLE | 标称二极管电容: | 1.5 pF |
二极管元件材料: | SILICON | 二极管类型: | VARIABLE CAPACITANCE DIODE |
频带: | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | JESD-30 代码: | R-PDIP-T2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 最大功率耗散: | 0.15 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
1SS104 | TOSHIBA | SILICON PLANAR TYPE DIODE |
获取价格 |
|
1SS104 | SUNMATE | Switching Diodes Switch detector |
获取价格 |
|
1SS106 | SEMTECH | SILICON SCHOTTKY BARRIER DIODE |
获取价格 |
|
1SS106 | RENESAS | Silicon Schottky Barrier Diode for Various Detector, High Speed Switching |
获取价格 |
|
1SS106 | HITACHI | Silicon Schottky Barrier Diode for Various Detector, High Speed Switching |
获取价格 |
|
1SS106 | SUNMATE | Switching Diodes Switch detector |
获取价格 |