Datasheet > 1SMB3EZ12-AU

1SMB3EZ12-AU

更新时间： 2024-11-29 12:30:51

品牌	Logo	应用领域
强茂 - PANJIT		稳压二极管
页数	文件大小	规格书
6页	319K
描述
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

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中文翻译

获取价格

数据手册

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1SMB3EZ12-AU 数据手册

1SMB3EZ4.7-AU SERIES

GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

POWER

VOLTAGE

4.7 to 51 Volts

3.0 Watts

FEATURES

• Low profile package

• Built-in strain relief

• Glass passivated junction

• Low inductance

• Plastic package has Underwriters Laboratory Flammability

Classification 94V-O

0.185(4.70)

0.160(4.06)

• High temperature soldering : 260°C /10 seconds at terminals

• Acqire quality system certificate : TS16949

• AEC-Q101 qualified

0.012(0.305)

0.006(0.152)

• Lead free in comply with EU RoHS 2002/95/EC directives

0.050(1.27)

0.030(0.76)

MECHANICAL DATA

0.220(5.59)

0.200(5.08)

• Case: JEDEC DO-214AA, Molded plastic over passivated junction

• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

• Polarity : Color band denotes cathode end

• Standard packing: 12mm tape (E1A-481)

• Weight: 0.0032 ounce, 0.092 gram

Cathode

Anode

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

Value

3.0

Units

Steady State Power Dissipation at T_L=75 ^OC (Note 1)

W atts

Peak Forward Surge Current 8.3ms single half sine-wave

superimposed on rated load (JEDEC method)

Amps

^OC

FSM

Operating Junction and Storage Temperature Range

-55 to + 150

TJ,TSTG

NOTE :

1. Mounted on infinite heatsink.

PAGE . 1

January 02,2012-REV.08

12 3 4 5 6

中文翻译

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