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1SMB30AT3 PDF预览

1SMB30AT3

更新时间： 2023-12-18 00:00:00
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
7页 69K
描述
600 Watt Peak Power Zener Transient Voltage Suppressors

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中文翻译

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1SMB30AT3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：DO-214
包装说明：LEAD FREE, PLASTIC, CASE 403A-03, SMB, 2 PIN针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.42
Samacsys Description：NULL其他特性：EXCELLENT CLAMPING CAPABILITY, LOW IMPEDANCE, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压：36.8 V最小击穿电压：33.3 V
击穿电压标称值：35.05 V最大钳位电压：48.4 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：0.55 W
认证状态：Not Qualified最大重复峰值反向电压：30 V
子类别：Transient Suppressors表面贴装：YES
技术：ZENER端子面层：Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40

1SMB30AT3 数据手册

 浏览型号1SMB30AT3的Datasheet PDF文件第2页浏览型号1SMB30AT3的Datasheet PDF文件第3页浏览型号1SMB30AT3的Datasheet PDF文件第4页浏览型号1SMB30AT3的Datasheet PDF文件第5页浏览型号1SMB30AT3的Datasheet PDF文件第6页浏览型号1SMB30AT3的Datasheet PDF文件第7页 
1SMB5.0AT3 Series  
600 Watt Peak Power Zener  
Transient Voltage  
Suppressors  
Unidirectional*  
http://onsemi.com  
The SMB series is designed to protect voltage sensitive  
components from high voltage, high energy transients. They have  
excellent clamping capability, high surge capability, low zener  
impedance and fast response time. The SMB series is supplied in  
ON Semiconductor’s exclusive, cost-effective, highly reliable  
Surmetict package and is ideally suited for use in communication  
systems, automotive, numerical controls, process controls, medical  
equipment, business machines, power supplies and many other  
industrial/consumer applications.  
PLASTIC SURFACE MOUNT  
ZENER OVERVOLTAGE  
TRANSIENT SUPPRESSORS  
5.0 V − 170 V,  
600 W PEAK POWER  
Features  
Cathode  
Anode  
• Working Peak Reverse Voltage Range − 5.0 V to 170 V  
• Standard Zener Breakdown Voltage Range − 6.7 V to 199 V  
• Peak Power − 600 W @ 1.0 ms  
• ESD Rating of Class 3 (>16 kV) per Human Body Model  
• Maximum Clamp Voltage @ Peak Pulse Current  
• Low Leakage < 5.0 mA Above 10 V  
• UL 497B for Isolated Loop Circuit Protection  
• Response Time is Typically < 1.0 ns  
• Pb−Free Packages are Available  
SMB  
CASE 403A  
PLASTIC  
MARKING DIAGRAM  
AYWW  
xx G  
G
A
Y
= Assembly Location  
= Year  
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
WW = Work Week  
xx  
= Device Code (Refer to page 3)  
= Pb−Free Package  
G
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
(Note: Microdot may be in either location)  
260°C for 10 Seconds  
LEADS: Modified L−Bend providing more contact area to bond pads  
POLARITY: Cathode indicated by polarity band  
MOUNTING POSITION: Any  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
1SMBxxxAT3  
1SMBxxxAT3G  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
SMB  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
February, 2007 − Rev. 10  
1SMB5.0AT3/D  
1234567

中文翻译

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1SMB30AT3 替代型号

型号 品牌 替代类型 描述 数据表
1SMB30AT3G ONSEMI

类似代替

 600 Watt Peak Power Zener Transient Voltage Suppressors
1SMB30AT3G LITTELFUSE

功能相似

 Trans Voltage Suppressor Diode, 600W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ30A-TR STMICROELECTRONICS

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 TRANSILTM

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