Datasheet > 1SMB2EZ6.8_09

1SMB2EZ6.8_09

更新时间： 2024-11-29 07:23:35

品牌	Logo	应用领域
强茂 - PANJIT		稳压二极管
页数	文件大小	规格书
5页	351K
描述
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

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数据手册

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1SMB2EZ6.8_09 数据手册

1SMB2EZ6.8~1SMB2EZ51

GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

POWER

VOLTAGE

6.8 to 51 Volts

2.0 Watts

FEATURES

• Low profile package

• Built-in strain relief

• Glass passivated iunction

• Low inductance

• Typical I_Dless than 1.0µA above 11V

• Plastic package has Underwriters Laboratory Flammability

Classification 94V-O

• High temperature soldering : 260°C /10 seconds at terminals

• In compliance with EU RoHS 2002/95/EC directives

MECHANICALDATA

• Case: JEDEC DO-214AA, Molded plastic over passivated junction

• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: Indicated by cathode band

• Standard packing: 12mm tape (E1A-481)

• Weight: 0.0032 ounce, 0.092 gram

MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

Value

3.0

Units

Peak Pulse Power Dissipation on T_L=50 ^OC (Notes A)

Derate above 50 ^OC

W atts

Peak Forward Surge Current 8.3ms single half sine-wave

superimposed on rated load (JEDEC method)

Amps

^OC

FSM

Operating Junction and Storage Temperature Range

-55 to + 150

TJ,TSTG

NOTES:

A.Mounted on 5.0mm²(.013mm thick) land areas.

B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum

PAGE . 1

STAD-FEB.10.2009

12 3 4 5

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