Datasheet > 1S90

1S90

更新时间： 2024-09-21 05:57:15

品牌	Logo	应用领域
顺烨 - SHUNYE		/
页数	文件大小	规格书
2页	258K
描述
SCHOTTKY BARRIER RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1S90 数据手册

1S20 THRU 1SA0

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere

R-1

FEATURES

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

1.0 (25.4)

MIN.

Metal silicon junction,majority carrier conduction

Low power loss,high efficiency

High forward surge current capability

High temperature soldering guaranteed:

0.102 (2.6)

0.091 (2.3)

DIA.

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.140(3.50)

0.114(2.90)

1.0 (25.4)

MIN.

MECHANICAL DATA

Case: R-1 molded plastic body

0.025 (0.60)

0.021 (0.50)

DIA.

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Dimensions in inches and (millimeters)

Mounting Position: Any

Weight:0.007 ounce, 0.20 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

1S 1S

70 80

1S 1S 1S

30 40

1S 1S

50 60

SYMBOLS

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

20 30 40 50 60 70 80

90 100

63 70

90 100

VOLTS

VRRM

VRMS

VDC

14 21 28 35 42

20 30 40 50 60 70 80

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length(see fig.1)

Peak forward surge current

I(AV)

1.0

Amp

IFSM

40.0

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

0.55

0.70

1.0

0.85

Maximum instantaneous forward voltage at 1.0A

Volts

Maximum DC reverse current

at rated DC blocking voltage

TA=25 C

TA=100 C

10.0

Typical junction capacitance (NOTE 1)

110

C/W

Typical thermal resistance (NOTE 2)

Operating junction temperature range

RqJA

50.0

-65 to +125

-65 to +150

TJ,

Storage temperature range

TSTG

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

www.shunyegroup.com

中文翻译

下载PDF

与1S90相关器件

型号	品牌	获取价格	描述	数据表
1S920	NJSEMI	获取价格	General Purpose Diodes
1S920T26A	TI	获取价格	50V, SILICON, SIGNAL DIODE
1S920T26R	TI	获取价格	DIODE 50 V, SILICON, SIGNAL DIODE, Signal Diode
1S920T50A	TI	获取价格	DIODE 50 V, SILICON, SIGNAL DIODE, Signal Diode
1S920T50R	TI	获取价格	DIODE 50 V, SILICON, SIGNAL DIODE, Signal Diode
1S921	NJSEMI	获取价格	General Purpose Diodes
1S921T26A	TI	获取价格	100V, SILICON, SIGNAL DIODE
1S921T26R	TI	获取价格	100V, SILICON, SIGNAL DIODE
1S921T50A	TI	获取价格	100V, SILICON, SIGNAL DIODE
1S921T50R	TI	获取价格	100V, SILICON, SIGNAL DIODE