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1S923 PDF预览

1S923

更新时间: 2024-01-28 12:55:22
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 信号二极管
页数 文件大小 规格书
2页 61K
描述
Small Signal Diode

1S923 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:O-PALF-W2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.72外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JEDEC-95代码:DO-35JESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:4 A
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
最大功率耗散:0.5 W认证状态:Not Qualified
最大重复峰值反向电压:200 V子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

1S923 数据手册

 浏览型号1S923的Datasheet PDF文件第2页 
1S922/1S923  
DO-35  
Color Band Denotes Cathode  
Small Signal Diode  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VRRM  
Maximum Repetitive Reverse Voltage  
150  
200  
200  
V
V
mA  
1S922  
1S923  
IF(AV)  
IFSM  
Average Rectified Forward Current  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
4.0  
A
A
Pulse Width = 1.0 microsecond  
Storage Temperature Range  
-65 to +200  
°C  
Tstg  
TJ  
Operating Junction Temperature  
175  
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
500  
300  
mW  
RθJA  
C/W  
°
Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max Units  
VR  
Breakdown Voltage  
150  
200  
V
V
1S922  
1S923  
IR = 5 µA  
I = 5  
A
µ
R
VF  
IR  
Forward Voltage  
Reverse Current  
IF = 200 mA  
1.2  
V
VR = 150 V  
VR = 150 V, TA = 150°C  
VR = 200 V  
100  
50  
100  
50  
nA  
µA  
nA  
µA  
1S922  
1S923  
VR = 200 V, TA = 150°C  
2002 Fairchild Semiconductor Corporation  
1S922/1S923, Rev. B  

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