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1S20-TP PDF预览

1S20-TP

更新时间: 2024-02-02 22:14:52
品牌 Logo 应用领域
美微科 - MCC 瞄准线二极管
页数 文件大小 规格书
3页 101K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, R-1, 2 PIN

1S20-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:ROHS COMPLIANT, PLASTIC, R-1, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.57其他特性:LOW POWER LOSS
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:20 V
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1S20-TP 数据手册

 浏览型号1S20-TP的Datasheet PDF文件第2页浏览型号1S20-TP的Datasheet PDF文件第3页 
M C C  
1S20  
THRU  
1SA0  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
·
Plastic package has Underwriters Laboratory Flammability  
1.0 Amp Schottky  
Barrier Rectifier  
20 to 100 Volts  
Classification 94V-0  
·
·
·
·
Low power loss, high efficiency  
High current capability, Low forward voltage drop  
High surge capability  
Metal silicon junction, majority carrier conduction  
Maximum Ratings  
R-1  
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +125°C  
Maximum Thermal Resistance: 50oC/W Junction to Lead  
Maximum  
Maximum  
RMS  
Voltage  
Maximum DC  
MCC  
Recurrent  
Peak Reverse  
Voltage  
D
Blocking  
Voltage  
Part Number  
1S20  
1S30  
1S40  
1S50  
1S60  
1S80  
1SA0  
20V  
14V  
21V  
28V  
35V  
42V  
56V  
70V  
20V  
30V  
40V  
50V  
60V  
80V  
100V  
30V  
40V  
50V  
60V  
80V  
100V  
A
Cathode Mark  
B
Electrical Characteristics @ 25°C Unless Otherwise Specified  
D
Average Forward  
IF(AV)  
1.0 A  
T = 75°C  
C
Current  
Peak Forward Surge  
Current  
IFSM  
35A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
1S20-1S40  
1S50-1S60  
1S80-1SA0  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Typical Junction  
Capacitance  
C
I
FM = 1.0A;  
VF  
0.55V  
0.70V  
0.85V  
T = 25°C  
C
DIMENSIONS  
INCHES  
MM  
DIM  
NOTE  
MIN  
MAX  
0.140  
0.102  
0.024  
-----  
MIN  
2.90  
2.30  
0.50  
20.00  
MAX  
3.50  
2.60  
0.60  
-----  
A
B
C
D
0.116  
0.091  
0.020  
0.787  
IR  
0.5mA  
10mA  
T = 25°C  
T = 100°C  
C
C
Measured at  
1.0MHz, VR=4.0V  
CJ  
110pF  
Pulse Test: Pulse width 300 usec, Duty cycle 1%.  
www.mccsemi.com  
Revision: 3  
2002/12/31  

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